Non-volatile memory utilizing high K medium and nanocrystalline floating gate and its manufacture method

Abstract

The invention relates to the microelectronic technical field, and discloses a nonvolatile memory utilizing high-k dielectrics and nanocrystal floating gates, which comprises a silicon substrate 1, a source conducting area 6, a drain conducting area 7, a tunnel dielectric layer 2 made of high-k material, a nanocrystal floating gate layer 3, a control gate dielectric layer 4 made of high-k materials or SiO2 materials and a gate material layer 5, wherein the source conducting area 6 and the drain conducting area 7 are heavily doped on the silicon substrate, the tunnel dielectric layer 2 made of high-k materials is covered on a carrier channel between the source conducting area and the drain conducting area, the nanocrystal floating gate layer is covered on the tunnel dielectric layer, the control gate dielectric layer 4 is covered on the nanocrystal floating gate layer, and the gate material layer 5 is covered on the control gate dielectric layer. The invention simultaneously discloses a method for producing the nonvolatile memory utilizing high-k dielectrics and nanocrystal floating gates. By using the nonvolatile memory of the invention, memory properties of the floating gate nonvolatile memory, such as the programming / erasing speed, the data retention property, the programming / erasing endurance and the like, are increased, the programming / erasing voltage, the operation time and the operational power consumption are reduced, and further, the nonvolatile memory arises a compromise between the programming / erasing efficiency and the data retention, increases integration level, simplifies fabrication process, and reduces fabrication cost.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a nonvolatile memory utilizing high-k dielectrics and nanocrystal floating gates and a manufacturing method thereof. Background technique [0002] Floating gate structure memory is a mainstream memory type widely used and generally recognized at present. It is a very important semiconductor component and is widely used in the electronics and computer industries. Due to its own structure and material selection, the traditional floating gate memory has the limitations of requiring fast write / erase operations and long-term high-stability storage, and this contradiction has not been obvious as the technology node shrinks. Improvement limits the development of floating gate memory. [0003] As the feature size enters the nanometer level, how to adapt to the development of the process and improve the performance of writing, reading, erasing and maintaining the stored data whi...

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Problems solved by technology

[0014] However, the preparation of nanocrystalline particles by the above method generally has the disadvantages of complex production process, high production cost, low production efficiency, or difficult process control during the production process, or poor feasibility and poor compatibility with traditional CMOS processes.

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