Semiconductor device, and method for fabricating thereof

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of insulating layer damage, reducing the reliability and loss of SONOS components
CN101315946AInactive Publication Date: 2008-12-03DONGBU HITEK CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
DONGBU HITEK CO LTD
Publication Date
2008-12-03
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A semiconductor device having silicon-oxide-nitride-oxide-silicon (SONOS) structure that overcomes spatial limitations which trap charges by not utilizing a flat, planar structure of the ONO film including a charging trap layer, thereby making it possible to improve reliability for data preserving characteristic of a SONOS device.
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Description

[0001] The present invention takes Korean application 10-2007-0053764 (filing date: June 1, 2007) as priority. technical field

[0002] The present invention relates to a semiconductor device, in particular to a semiconductor device for manufacturing Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) elements and a manufacturing method thereof. Background technique

[0003] In general, semiconductor memories are broadly classified into volatile memories and non-volatile memories. Volatile memories such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory) and other RAMs can input data or save data when the power is applied, but the data is lost and cannot be saved when the power is cut off. Non-volatile memory, mainly ROM (read-only memory), has the feature of saving data even when there is no external power supply.

[0004] At present, in terms of engineering technology, nonvolatile memories are divided into floating gate (floating gate) series and MIS (metal...

Claims

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