Semiconductor device, and method for fabricating thereof

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of insulating layer damage, reducing the reliability and loss of SONOS components

Inactive Publication Date: 2008-12-03
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, if the thickness of the ONO film is changed to be too thin in order to improve the program characteristics, the insulating layer will be destroyed due to the high electric field, so that the data retention characteristics and durability characteristics will be deteriorated.
[0017] Also, with the existing technology, there is a limit to forming the ONO film very thin
Moreover, even if a very thin ONO film is formed, a part of the charge captured on the thinner ONO film is lost or thermalized due to the influence of external heat or repeated erase and write operations.
That is, in the process of programming and erasing, the charges trapped in the nitride layer are often lost, which reduces the reliability of the SONOS device to maintain the data characteristics.

Method used

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  • Semiconductor device, and method for fabricating thereof
  • Semiconductor device, and method for fabricating thereof
  • Semiconductor device, and method for fabricating thereof

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Embodiment Construction

[0035] Below, the configuration and function of the embodiments of the present invention will be described with reference to the accompanying drawings. The configuration and function of the present invention shown in the accompanying drawings and described with reference to the accompanying drawings will be described by at least one embodiment. The above-mentioned technical idea of ​​the present invention And core structure and function are not limited to this. The semiconductor device according to the present invention is a SONOS structure. Thus, the basic structure of the semiconductor device according to the present invention is that an ONO film as a plurality of insulating films laminated is formed on an upper portion of an active region, and a gate electrode is formed on an upper portion of the ONO film. And, a source / drain junction is formed in the semiconductor substrate.

[0036] In particular, the present invention breaks away from the planar structure of the usual S...

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Abstract

A semiconductor device having silicon-oxide-nitride-oxide-silicon (SONOS) structure that overcomes spatial limitations which trap charges by not utilizing a flat, planar structure of the ONO film including a charging trap layer, thereby making it possible to improve reliability for data preserving characteristic of a SONOS device.

Description

[0001] The present invention takes Korean application 10-2007-0053764 (filing date: June 1, 2007) as priority. technical field [0002] The present invention relates to a semiconductor device, in particular to a semiconductor device for manufacturing Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) elements and a manufacturing method thereof. Background technique [0003] In general, semiconductor memories are broadly classified into volatile memories and non-volatile memories. Volatile memories such as DRAM (Dynamic Random Access Memory), SRAM (Static Random Access Memory) and other RAMs can input data or save data when the power is applied, but the data is lost and cannot be saved when the power is cut off. Non-volatile memory, mainly ROM (read-only memory), has the feature of saving data even when there is no external power supply. [0004] At present, in terms of engineering technology, nonvolatile memories are divided into floating gate (floating gate) series and MIS (metal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/792H01L21/336H01L21/28
CPCH01L21/28282H01L29/4234H01L29/40117
Inventor 金大荣
Owner DONGBU HITEK CO LTD
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