Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making

A field effect transistor, semiconductor technology, applied in transistors, semiconductor devices, thyristors, etc., can solve problems such as threshold voltage drift, difficulty in achieving monolithic integration, and low reverse channel mobility

Inactive Publication Date: 2008-12-03
PI
View PDF12 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Other issues include: low reverse channel mobility due to high interface state density at the SiC/SiO2 interface and high fixed charge density in the insulator; and Threshold voltage drifts sign

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making
  • Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making
  • Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of making

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] Provides a vertical channel junction field effect transistor (JFET) that can be electrically isolated from other devices fabricated on the same die and that can be made in such a way that devices fabricated on the same die have different threshold voltages to fulfill. Also provided are monolithic integrated circuits comprising the devices described above and methods of making the devices and integrated circuits comprising the devices.

[0080] The present invention generally relates to junction field effect transistors (JFETs) having vertical channels and monolithic integrated circuits fabricated using such devices. In particular, the invention relates to such transistors and circuits formed in wide bandgap semiconductor materials.

[0081] The device can be built in a wide bandgap (i.e. E G >2eV) semiconductor substrate, the substrate can be a semi-insulating, p-type substrate or an n-type substrate with a p-type buffer layer. The device may include source, channel,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprise source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain layers can be epitaxially grown. The ohmic contacts to the source, gate, and drain regions can be formed on the same side of the wafer. The devices can have different threshold voltages depending on the vertical channel width and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used for digital, analog, and monolithic microwave integrated circuits. Methods for making the transistors and integrated circuits comprising the devices are also described.

Description

[0001] This application is related to U.S. Patent Application 60 / 585,881 filed on July 8, 2004 and the application entitled "Normally-Off Integrated JFET PowerSwitches in Wide Bandgap Semiconductors and Methods of Making" filed on December 1, 2004. normally-off integrated JFET power switch and method of manufacture)" in US Patent Application 11 / 000,222. Each of the above applications is fully incorporated herein by reference. technical field [0002] This invention relates generally to lateral field effect transistors (FETs) having vertical channels, and in particular to such transistors formed in wide bandgap semiconductor materials. The invention also relates to monolithic integrated circuits comprising such transistors. Background technique [0003] Wide bandgap semiconductor materials (E G >2eV) such as silicon carbide (SiC) or Group III nitride compound semiconductors (eg gallium nitride GaN) are very attractive for use in high power, high temperature and / or radiat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/74H01L29/423H01L31/111
CPCH01L29/2003H01L27/098H01L29/1608H01L29/808H01L29/47H01L29/8122H01L29/80
Inventor 伊格尔·桑金杰弗里·B.·卡萨德约瑟夫·N.·梅里特
Owner PI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap