Method for forming fine pattern of semiconductor device

Abstract

A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etching barrier mask, removing the third mask pattern, forming a spin-on-carbon layer that exposes the upper portion of the second mask pattern, performing an etching process to expose the underlying layer with the spin-on-carbon layer as an etching barrier mask, and removing the spin-on-carbon layer.

Description

technical field [0001] The present invention generally relates to a method of forming a fine pattern of a semiconductor device. Background technique [0002] Due to the spread of information media such as computers, semiconductor device technology has been rapidly developed. Semiconductor devices are required to operate at high speed and have high memory capacity. As a result, semiconductor device manufacturing techniques are required to manufacture high-capacity memory elements with higher integration, reliability, and data access characteristics. [0003] In order to increase the integration of devices, photolithography has been developed to form fine patterns. Photolithography techniques include exposure techniques using chemically amplified deep ultraviolet (DUV) light sources such as ArF (193nm) and VUV (157nm), and techniques of developing photoresists suitable for exposure light sources. [0004] As semiconductor devices become smaller, it is important to control t...

AI Technical Summary

Problems solved by technology

As a result, the double patterning technique cannot obtain the desired pattern

During the alignment process, coverage misregistration occurs

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