Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of deterioration of characteristics of thin-film inductance components, inability to suppress interference electromagnetic radiation noise, etc., to reduce eddy current loss Effect

Inactive Publication Date: 2008-12-10
AOI ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in Japanese Unexamined Patent Publication No. 2004-342876 (FIG. 6), the upper surface side of the semiconductor substrate can be protected from contamination and damage from the external atmosphere by a sealing film formed of epoxy resin or the like, but there are The problem is that disturbing electromagnetic radiation noise from the upper surface side of the semiconductor substrate to the outside, or vice versa from the outside to the

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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no. 1 Embodiment approach

[0035] figure 1 A cross-sectional view of the semiconductor device according to the first embodiment of the present invention is shown. This semiconductor device is generally called a CSP, and includes a silicon substrate (semiconductor substrate) 1 . An integrated circuit (not shown) with a predetermined function is provided on the upper surface of the silicon substrate 1, and a plurality of connection pads 2 made of aluminum-based metal or the like are provided in connection with the integrated circuit on the peripheral portion of the upper surface.

[0036] An insulating film 3 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 1 except for the central portion of the connecting pad 2 exposed through the opening 4 provided in the insulating film 3 . A protective film 5 formed of a thermosetting resin such as polyimide resin or epoxy resin is provided on the upper surface of the insulating film 3 . On a portion corresponding to the o...

no. 2 Embodiment approach

[0048] Figure 10 A cross-sectional view of a semiconductor device as a second embodiment of the present invention is shown. The semiconductor device and figure 1 The semiconductor device shown in is different in that the protective film (insulating film) 5 is formed of a material in which soft magnetic powder 5b is mixed into a thermosetting resin 5a made of polyimide-based resin, epoxy-based resin, or the like .

[0049] In this semiconductor device, due to the action of the soft magnetic powders 10b and 5b in the sealing film 10 and the protective film 5, it is possible to compare figure 1 The case of the semiconductor device shown in further suppresses interfering electromagnetic radiation noise from the upper surface side (integrated circuit) of the silicon substrate 1 to the outside, or vice versa. In addition, when forming the protective film 5, since the thermosetting resin 5a mixed with the soft magnetic powder 5b can be applied by screen printing, spin coating, or...

no. 3 Embodiment approach

[0051] Figure 11 (A) is a perspective plan view of a main part of a semiconductor device as a third embodiment of the present invention, Figure 11 (B) is a cross-sectional view along the B-B line thereof. This semiconductor device is generally referred to as a CSP, and includes a planar square silicon substrate (semiconductor substrate) 1 . An integrated circuit (not shown) having a predetermined function is provided on the upper surface of the silicon substrate 1, and a plurality of connection pads 2a, 2b, 2c formed of an aluminum-based metal or the like are provided on the peripheral portion of the upper surface to be connected to the integrated circuit. In this case, connection pads denoted by reference numerals 2b and 2c are connected to both ends of the helical thin-film inductance element 13 to be described later. Figure 11 (A) are arranged adjacent to each other.

[0052] An insulating film 3 formed of silicon oxide or the like is provided on the upper surface of ...

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Abstract

The invention relates to a semiconductor device mixed with magnetic powder and a manufacturing method thereof. According to the invention, because a material mixed with the magnetic powder in the resin forms a sealing membrane, interfering electromagnetic radiation noise can be restrained from an integrated circuit on the upper surface of a semiconductor substrate to the exterior or inversely from the exterior to an integrated circuit on the upper surface of a semiconductor substrate. In addition, in a semiconductor device comprising a spiral membrane inductive component named as CSP, a magnetic membrane formed by a material mixed with the magnetic powder in the resin is arranged between the semiconductor substrate and the membrane inductive component, thereby reducing eddy current loss of the membrane inductive component caused by eddy current generated in the semiconductor substrate.

Description

technical field [0001] The present invention relates to a semiconductor device mixed with magnetic substance powder and its manufacturing method. Background technique [0002] In Japanese Unexamined Patent Application Publication No. 2004-342876 (FIG. 6), a semiconductor device called CSP (chip size package) is disclosed, in which a plurality of wirings are provided on a semiconductor substrate, and a connection pad of the wirings is A columnar electrode is provided on the upper surface of the part, and a sealing film formed of epoxy resin or the like is provided on a semiconductor substrate including wiring so that its upper surface is on the same surface as the upper surface of the columnar electrode, and on the upper surface of the columnar electrode Solder balls are provided on it. [0003] However, in Japanese Unexamined Patent Publication No. 2004-342876 (FIG. 6), the upper surface side of the semiconductor substrate can be protected from contamination and damage from...

Claims

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Application Information

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IPC IPC(8): H01L23/552H01L23/31H01L27/04H01L23/522H01L21/00H01L21/56H01L21/822
CPCH01L23/3114H01L23/525H01L23/552H01L23/645H01L24/03H01L24/05H01L24/94H01L2224/023H01L2224/0401H01L2224/13H01L2224/94H01L2924/01005H01L2924/01027H01L2924/01029H01L2924/0103H01L2924/01046H01L2924/01072H01L2924/01073H01L2924/01078H01L2924/14H01L2224/03H01L2924/00H01L2924/0001
Inventor 青木由隆
Owner AOI ELECTRONICS CO LTD
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