Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of deterioration of characteristics of thin-film inductance components, inability to suppress interference electromagnetic radiation noise, etc., to reduce eddy current loss Effect
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no. 1 Embodiment approach
[0035] figure 1 A cross-sectional view of the semiconductor device according to the first embodiment of the present invention is shown. This semiconductor device is generally called a CSP, and includes a silicon substrate (semiconductor substrate) 1 . An integrated circuit (not shown) with a predetermined function is provided on the upper surface of the silicon substrate 1, and a plurality of connection pads 2 made of aluminum-based metal or the like are provided in connection with the integrated circuit on the peripheral portion of the upper surface.
[0036] An insulating film 3 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 1 except for the central portion of the connecting pad 2 exposed through the opening 4 provided in the insulating film 3 . A protective film 5 formed of a thermosetting resin such as polyimide resin or epoxy resin is provided on the upper surface of the insulating film 3 . On a portion corresponding to the o...
no. 2 Embodiment approach
[0048] Figure 10 A cross-sectional view of a semiconductor device as a second embodiment of the present invention is shown. The semiconductor device and figure 1 The semiconductor device shown in is different in that the protective film (insulating film) 5 is formed of a material in which soft magnetic powder 5b is mixed into a thermosetting resin 5a made of polyimide-based resin, epoxy-based resin, or the like .
[0049] In this semiconductor device, due to the action of the soft magnetic powders 10b and 5b in the sealing film 10 and the protective film 5, it is possible to compare figure 1 The case of the semiconductor device shown in further suppresses interfering electromagnetic radiation noise from the upper surface side (integrated circuit) of the silicon substrate 1 to the outside, or vice versa. In addition, when forming the protective film 5, since the thermosetting resin 5a mixed with the soft magnetic powder 5b can be applied by screen printing, spin coating, or...
no. 3 Embodiment approach
[0051] Figure 11 (A) is a perspective plan view of a main part of a semiconductor device as a third embodiment of the present invention, Figure 11 (B) is a cross-sectional view along the B-B line thereof. This semiconductor device is generally referred to as a CSP, and includes a planar square silicon substrate (semiconductor substrate) 1 . An integrated circuit (not shown) having a predetermined function is provided on the upper surface of the silicon substrate 1, and a plurality of connection pads 2a, 2b, 2c formed of an aluminum-based metal or the like are provided on the peripheral portion of the upper surface to be connected to the integrated circuit. In this case, connection pads denoted by reference numerals 2b and 2c are connected to both ends of the helical thin-film inductance element 13 to be described later. Figure 11 (A) are arranged adjacent to each other.
[0052] An insulating film 3 formed of silicon oxide or the like is provided on the upper surface of ...
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