Unlock instant, AI-driven research and patent intelligence for your innovation.

Semi-conductor test structure

By adopting a multi-layer structure and the design of redistribution lines and vias in the semiconductor test device, the distance between probes is reduced, the problem of being unable to connect small semiconductor devices in the existing technology is solved, and effective testing of smaller semiconductor devices is achieved. .

Inactive Publication Date: 2009-01-14
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the minimum pitch of this probe card (that is, the pitch of the electrical connector) is limited by the structure and shape of the electrical connector between the printed circuit board and the probe pins.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] A detailed description of the manufacturing and use of the preferred embodiment of the present invention is as follows. The invention can provide innovative concepts and be widely used in various professional fields. The preferred embodiments of the present invention are only used to describe each specific method in the manufacturing and use process of the present invention, but they are not used to limit the present invention.

[0032] 1, it shows a silicon substrate 101 and a plurality of via holes 103 formed on the substrate. The substrate 101 includes a semiconductor material, such as silicon, germanium, silicon germanium or a compound thereof, and the initial thickness of the substrate 101 is between 150 μm and 762 μm, and the preferred thickness is about 500 μm.

[0033] A plurality of via holes 103 pass through the substrate 101 and are distributed in the outer portion 105 of the substrate, and there is no via hole 103 distributed in the inner portion 107 of the subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and a method of testing a semiconductor die is provided. An embodiment comprises a printed circuit board connected to a space transformation layer, which is connected to a substrate. The substrate uses through silicon vias and a redistribution layer to reduce the pitch of the connections beyond the historical limitations. A probe head using Cobra-style probe pins is connected to the redistribution layer through C4 bumps.

Description

Technical field [0001] The present invention relates to a semiconductor crystal grain testing structure, in particular to a semiconductor crystal grain testing structure with ultra-fine pitch probe cards. Background technique [0002] Integrated circuit products and semiconductor devices must be tested after they are manufactured to ensure the normal operation of their functions. The test method usually uses a test probe card to contact the tested area of ​​the semiconductor and introduce current to perform one or more functional tests. There are two main types of probe cards for current testing. [0003] The first type of probe card has a set of cantilever connectors, which are arranged radially from the periphery of the probe card to the center. When the probe card drops above the semiconductor to be tested, the cantilever connector connects the corresponding contact pads on the semiconductor device to complete the electrical connection of the test circuit. However, this type o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00G01R31/26G01R31/28G01R1/02G01R1/067G01R1/073
CPCG01R1/06744G01R1/07378G01R1/07357
Owner TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD