Method of cleaning substrates and substrate cleaner

A technology for cleaning devices and substrates, which is applied to cleaning methods and tools, cleaning methods using liquids, chemical instruments and methods, etc., which can solve the problem of weakening the cleaning force, the inability to apply immersion cleaning to dual-fluid jetting, and the inability to obtain foreign matter removal effects, etc. problem, achieve high efficiency and prevent damage

Inactive Publication Date: 2009-01-14
RENESAS ELECTRONICS CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in order to prevent damage to fine patterns, the cleaning power must be weakened, and a sufficient foreign matter removal effect cannot be obtained.
In addition, due to the single-piece processing method, there is a problem that the two-fluid jet cannot be applied to immersion cleaning

Method used

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  • Method of cleaning substrates and substrate cleaner
  • Method of cleaning substrates and substrate cleaner
  • Method of cleaning substrates and substrate cleaner

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] In this embodiment, in the cleaning method of the batch immersion treatment method, the effect of the saturation of the dissolved hydrogen on the cleaning efficiency (particle removal rate) and the damage of fine patterns (the number of pattern damages) was investigated. figure 1 It is a schematic diagram showing the preparation method of washing water. Such as figure 1 As shown, after the ultrapure water is supplied to the hydrogen water supply unit 1, it is heated by the warmer 2 as needed, and then the liquid is supplied to the cleaning tank 3 at a flow rate of 7 L / min. In the hydrogen water supply unit 1, KHOW-HS10S (manufactured by Kurita Industries) was used to prepare a cleaning solution with a predetermined dissolved hydrogen concentration. In such a hydrogen water supply unit 1, although hydrogen gas generated by the electrolysis of water is used, hydrogen may be supplied from the outside through a hydrogen high-pressure gas cylinder or the like. In addition, afte...

Embodiment 2

[0051] In this embodiment, the influence of the output power of the ultrasonic wave on the removal rate of particles and the number of pattern damage is investigated. In addition, the same steps as in Example 1 were performed except that the dissolved hydrogen saturation was 88%, the liquid temperature of the washing water was 23° C., and the output power of ultrasonic waves was changed. The results are shown in Table 2. In addition, the effect of ultrasonic output power on the removal rate of particles and the number of pattern damage is shown in image 3 in. Such as image 3 As shown, although the output power of the ultrasonic wave is increased to increase the removal rate of particles, the damage of the fine pattern is increased, so the output power of the ultrasonic wave is preferably 0.05W / cm 2 ~0.2W / cm 2 In the range.

[0052] Table 2

[0053]

Embodiment 3

[0055] In this embodiment, the influence of the liquid temperature of the cleaning water on the removal rate of particles and the number of pattern damages was investigated. In addition, the same steps as in Example 1 were performed except that the dissolved hydrogen saturation was 88% and the liquid temperature of the washing water was changed. The effect of the temperature of the cleaning water on the removal rate of particles and the number of pattern damage is shown in Figure 4 in. Such as Figure 4 It is shown that although raising the liquid temperature of the cleaning water does not greatly change the removal rate of particles, the damage to the fine patterns will be reduced.

[0056] Such as image 3 It is shown that although increasing the output power of ultrasonic waves will increase the removal rate of particles, the damage of fine patterns will also increase. But like Figure 4 As shown, if the temperature of the washing water is increased, the removal rate of partic...

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Abstract

The invention relates to a substrate cleaning method and device. There is provided a method of efficiently cleaning substrates without damaging a fine pattern formed thereon. It is a method of cleaning one or more substrates by dipping one or more substrates as one batch, including the steps of: immersing one or more substrates as one batch in a wet etching solution; ultrasonically cleaning one or more substrates as one batch; and drying one or more substrates as one batch. The step of ultrasonically cleaning employs a cleaning solution having a gas dissolved therein to have a degree of saturation of 60% to 100% at an atmospheric pressure, and an ultrasonic wave having a frequency of at least 500 kHz and energy of 0.02 W / cm2 to 0.5 W / cm2.

Description

Technical field [0001] The present invention relates to the cleaning of substrates, and more particularly, to a cleaning method and cleaning device for removing contaminants attached to the surface of substrates such as semiconductor substrates, liquid crystal substrates, magnetic disk substrates, or photomasks. Background technique [0002] As a technique for removing particles on a semiconductor substrate, there is a conventional cleaning method using physical forces such as ultrasonic waves or two-fluid jets (see JP 2001-345301 A (Patent Document 1)). Although either of them is an excellent cleaning method with high cleaning effect, there is a problem that the removal of foreign matter and the damage of fine patterns are linked. That is, there is a problem that the higher the cleaning effect, the greater the damage to the fine pattern. Therefore, in order to prevent damage to fine patterns, the cleaning power must be weakened, and a sufficient foreign matter removal effect can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02B08B3/08B08B3/12
CPCH01L21/6708H01L21/67086H01L21/304
Inventor 广田祐作菅野至森田博志井田纯一
Owner RENESAS ELECTRONICS CORP
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