Slot filling method and manufacturing method for shallow slot isolation

Abstract

Disclosed is a groove filling method, including the following steps: providing a semiconductor structure with a groove; performing a first stage chemical vapor deposition process so as to develop a first film layer on the surface of the semiconductor and the surface of the groove; wherein the thickness of the first film layer is smaller than the depth of the groove; processing oxygen plasma treatment to the first film layer; performing a second stage chemical vapor deposition process on the first film layer so as to develop a second film layer on the first film layer; the second film layer at least fills the groove full; and processing oxygen plasma treatment to the second film layer. The invention further provides a shallow groove isolation fabrication method. The invention produces no or few SRO particles during the filling process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a trench filling method and a shallow trench isolation manufacturing method. Background technique [0002] With the continuous development of semiconductor integrated circuit manufacturing technology, the size of semiconductor devices is getting smaller and smaller, and the integration level is getting higher and higher; the isolation technology of semiconductor devices and devices has also changed from the original Local Oxidation of Silicon (LOCOS) Developed into shallow trench isolation (Shallow Trench Isolation, STI). Shallow trench isolation is formed by forming a trench on a semiconductor substrate and filling the trench with a dielectric material. [0003] The Chinese patent application document whose publication number is CN 1649122A discloses a manufacturing method of shallow trench isolation; Figure 1 to Figure 5 The schematic cross-section shown: ...

AI Technical Summary

Problems solved by technology

[0012] However, after the HDPCVD method forms a silicon oxide film layer in the trench 18 and on the semiconductor substrate outside the trench 18, there are usually silicon rich silicon oxide (Silicon RichOxide, SRO) particles in the silicon oxide film layer, The hardness of SRO is larger than that of silicon oxide; SRO particles will affect the judgment of the grinding end point during the subsequent chemical mechanical polishing process, and it is impossible to judge more accurately whether the chemical mechanical polishing is completed. Defects formed on silicon oxide residues

Images