Production method and apparatus for single-slice integrated semiconductor laser array

Abstract

Method for manufacturing a monolithic integrated semiconductor laser array, wherein each laser DFB grating structure in the array being sampling Bragg grating structure, the grating of each DFB semiconductor laser waveguide in the array is sampling Bragg grating, and the sampling Bragg grating containing equivalent grating corresponding to the common Bragg grating; the mase wavelength of the DFB semiconductor laser is determined by sampling period of the sampling structure of the sampling Bragg grating within the equivalent grating action bandwidth of the sampling Bragg grating, and it is able to change mase wavelength by changing sampling period. The sampling period is increased or decreased by mask plate with various sampling pattern, and various wavelength mases are implemented by closing in or outlying a center wavelength of the DFB laser mase wavelength, thus to implement multi-channel multi-wavelength laser array; the invention implements various complicated equivalent phase-shift with sub-micron stage accuracy, namely corresponding equivalent grating has Lambada / 4 phase-shift, Lambada / 8 phase-shift and a CPM structure.

Description

Technical field

[0001] The invention belongs to the field of optoelectronic technology, is related to distributed feedback semiconductor laser arrays, and involves the design and production of complex distributed feedback semiconductor lasers. More specifically, it is a distributed feedback (DFB) semiconductor laser array prepared based on reconstruction-equivalent chirp technology. Methods and devices. Background technique

[0002] As information optoelectronics technology becomes more and more widely used in communications, detection and other fields, related industries have increasingly higher requirements for monolithic integrated devices, which is one of the commanding heights of future information technology. The use of monolithic integrated modules can provide communication core equipment with large capacity, small size, and low cost. For example, the American Infinera Company, considered the most promising emerging optical network company, has been able to provide 10...

Examples

Embodiment Construction

[0039] The structure of the distributed feedback semiconductor laser is that on the n-type substrate material, there are epitaxial n-type InP buffer layer, undoped lattice-matched InGaAsP waveguide layer, strained InGaAsP multiple quantum wells, InGaAsP grating material layer, InGaAsP waveguide layer, InP The confinement layer and the InGaAs ohmic contact layer are sequentially formed; the grating of the InGaAsP grating material layer is a sampled Bragg grating, which is the equivalent grating used for laser lasing; the surface of the equivalent grating of laser lasing is made of SiO with a thickness of 200-400nm 2 Insulation.

[0040] The sampled Bragg grating has multiple shadow gratings, and the wavelength interval between the shadow gratings is inversely proportional to the sampling period and the effective refractive index of the semiconductor laser waveguide. The following describes a 4-wavelength monolithic integrated DFB laser array with an operating wavelength in the ...

Technical field

[0001] The invention belongs to the field of optoelectronic technology, is related to distributed feedback semiconductor laser arrays, and involves the design and production of complex distributed feedback semiconductor lasers. More specifically, it is a distributed feedback (DFB) semiconductor laser array prepared based on reconstruction-equivalent chirp technology. Methods and devices. Background technique

[0002] As information optoelectronics technology becomes more and more widely used in communications, detection and other fields, related industries have increasingly higher requirements for monolithic integrated devices, which is one of the commanding heights of future information technology. The use of monolithic integrated modules can provide communication core equipment with large capacity, small size, and low cost. For example, the American Infinera Company, considered the most promising emerging optical network company, has been able to provide 10...

Examples

Embodiment Construction

[0039] The structure of the distributed feedback semiconductor laser is that on the n-type substrate material, there are epitaxial n-type InP buffer layer, undoped lattice-matched InGaAsP waveguide layer, strained InGaAsP multiple quantum wells, InGaAsP grating material layer, InGaAsP waveguide layer, InP The confinement layer and the InGaAs ohmic contact layer are sequentially formed; the grating of the InGaAsP grating material layer is a sampled Bragg grating, which is the equivalent grating used for laser lasing; the surface of the equivalent grating of laser lasing is made of SiO with a thickness of 200-400nm 2 Insulation.

[0040] The sampled Bragg grating has multiple shadow gratings, and the wavelength interval between the shadow gratings is inversely proportional to the sampling period and the effective refractive index of the semiconductor laser waveguide. The following describes a 4-wavelength monolithic integrated DFB laser array with an operating wavelength in the ...

Images