Processing device

A processing device and non-processing technology, which is applied in transportation and packaging, gaseous chemical plating, coating, etc., can solve problems such as undocumented, achieve the effect of inhibiting peeling and improving in-plane uniformity

Inactive Publication Date: 2009-02-25
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, as a prior patent document related to a rectifying member, Patent Document 1 describes a structure in which a movable ring configured to be protruded by a moving mechanism is provided on a lower electrode as a rectifying member, and Patent Document 2, It is described that a side wall provided with a gas flow port is provided as a rectification member so as to surround the peripheral portion of the substrate. Patent Document 3 describes an example in which a rectification member is constituted by a plurality of side walls provided along the periphery of the substrate. However, none of the above documents describe a structure that can place a substrate on a mounting table without driving the rectifying member, and the techniques described in these documents cannot solve the above-mentioned problems.

Method used

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Examples

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Effect test

experiment example

[0097] Hereinafter, examples performed to confirm the effects of the present invention will be described. In the following experiments, use figure 1 The etching processing apparatus shown performs etching processing on a substrate S on which a Ti film and an Al film are stacked on the surface using the following structures as rectification structures: Figure 8 The shown structure (embodiment 1) using the tunnel member 51 and the cylindrical member 73, Figure 10 In the shown structure using the tunnel member 51 and the cylindrical member 73 provided with the non-processing gas supply part 8 (Example 2), the structure without a rectifying structure (Comparative Example 1), and then the inside of the substrate S The etching rate at this time was measured at 22 positions, and the in-plane uniformity of the etching rate was calculated by (maximum value-minimum value) / (maximum value+minimum value). Here, the above maximum value represents the maximum value of the etching rate, ...

Embodiment 1

[0104] Example 1: ±16.5%

Embodiment 2

[0105] Example 2: ±10.1%

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Abstract

This invention provides a processing device for enhancing process in-plane homogeneity when processing gas flows into processing container to process the item to be processed, preventing particles from attaching on the item to be processed. In the processing container (20) having inlet / outlet (22) controlled by a switching mechanism (23) on side wall (21) thereof, a rectification structure (5) is disposed, wrapping bearing zone of bearing a stable (3) of a substrate (S), of which upper end has a transportation position higher than the substrate (S) to form a gas-hold zone for processing gas around the substrate (s) born on bearing table (3) in order to reduce flow speed of the processing gas around of the substrate (S). A tunnel element (51) is disposed on inlet / outlet (22) of the structure (5), this tunnel element (51) is used for forming transportation passage (P) of the substrate (S) between the inlet / outlet (22) and the bearing zone.

Description

technical field [0001] The present invention relates to supplying a processing gas into the processing container in a state in which, for example, an object to be processed such as an FPD (flat panel display) substrate is provided with a structure for rectification around the object to be processed, and the processing gas is used to A technique in which the above-mentioned object to be processed performs predetermined processing. Background technique [0002] In the manufacturing process of an object to be processed such as an LCD (liquid crystal display) substrate, there is a step of performing an etching process on an aluminum (Al) film formed on the object to be processed. For an example of an etching processing apparatus for performing this process, according to Figure 13 For brief description, 1 in the figure is a vacuum chamber, and in the inside of the vacuum chamber 1, a mounting table 11 for mounting an object to be processed, such as an FPD substrate S, is provide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3213H01L21/3065H01L21/205H01L21/677C23F4/00G03F7/42C23C16/44C23C16/455H01J37/32
CPCH01L21/3065H01L21/67034H01L21/67069
Inventor 东条利洋佐佐木和男
Owner TOKYO ELECTRON LTD
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