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LED chip with discharging structure

A LED chip and chip technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of high cost, achieve good protection, prevent overvoltage, and avoid breakdown

Inactive Publication Date: 2013-01-23
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current anti-static method widely used in LED production is to improve the purification level of the packaged LED production workshop environment (generally 10,000), and control the temperature and humidity in the purification room to reduce the damage of static electricity to the chip. The cost of production input is very high, this method is not a good solution

Method used

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  • LED chip with discharging structure
  • LED chip with discharging structure

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Embodiment 1

[0018] Embodiment one of the present invention, refer to figure 1 .

[0019] The LED chip is a chip with a vertical electrode structure, and the substrate is a silicon substrate, which includes an N electrode 1, an N-type doped semiconductor layer, a light-emitting layer 3, a P-type doped semiconductor layer 4, and a P electrode stacked together in sequence. 5. Substrate 6 and metal layer 7 . The light-emitting film material of the multilayer semiconductor structure above the substrate can be indium gallium aluminum nitride (InGaAlN) x Ga y Al 1-x-y N, 0≤x≤1, 0≤y≤1) materials, InGaAlP (In x Ga y Al 1-x-y P, 0≤x≤1, 0≤y≤1) material or InGaAlAs (In x Ga y Al 1-x-y As, 0≤x≤1, 0≤y≤1) material. In this embodiment, InGaAlN material is selected. This structure is a product structure after a flip-chip welding process, and its growth substrate has been removed, and the silicon substrate 6 is a transfer substrate. It is characterized in that the N electrode 1 and the N-type d...

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Abstract

The invention provides an LED chip with a discharging structure. The chip is mainly used for solving the problem of electric charge release of the chip in high voltage conditions such as static electricity to protect the chip. The LED chip comprises a first electrode, a first doped semiconductor layer, a luminous layer, a second doped semiconductor layer, a second electrode and a substrate; wherein the first doped semiconductor layer, the luminous layer and the second doped semiconductor layer are overlapped above the substrate in sequence from top to bottom; the LED chip also comprises a conductor connected on the side edge of either the first doped semiconductor layer or the second doped semiconductor layer, and a gap used for discharging is formed among the first doped semiconductor layer, the conductor and the second doped semiconductor layer; wherein an insulating layer is arranged between the conductor and the luminous layer. The invention can be used for the static electricity protection and the overvoltage protection of the LED chip.

Description

technical field [0001] The invention relates to a light emitting diode chip, in particular to the overvoltage protection of the light emitting diode chip. Background technique [0002] The existing light-emitting diode chips are mainly classified into three categories according to the material of the substrate: sapphire substrate, silicon substrate and silicon carbide substrate. Among them, the sapphire substrate chip has a single-sided electrode structure, and the silicon substrate and silicon carbide substrate mostly use a vertical electrode structure. The chips of light-emitting diodes are mainly composed of N electrodes, N-type doped semiconductor layers, light-emitting regions, P-type doped semiconductor layers, P electrodes and substrates. The size of these chips is very small. Due to the small size of the chip, its working voltage is only a few volts, and the static electricity is often several thousand volts, so it is very easy to be damaged by electrostatic breakdo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02
Inventor 江风益汤英文王立蔡德晟
Owner LATTICE POWER (JIANGXI) CORP