Purification method of dispersing gas guided in to metallic silicon

A technology for dispersing gas and metal silicon, applied in non-metallic elements, silicon compounds, chemical instruments and methods, etc., can solve problems such as insufficient ventilation, large particle voids, and melt blockage, and achieve uniform temperature distribution and small particle voids. , the effect of removing impurities

Inactive Publication Date: 2009-03-25
NAN AN SANJING SOLAR POWER
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Problems solved by technology

This method overcomes the shortcomings of the loose combination of particles in the previous method, but the particles used in this method are relatively large, and their diameters are on the order of mm, so the ventilation

Method used

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Example Embodiment

[0034] The present invention will be further described below in conjunction with the examples, but the following examples are only provided for reference and illustration, rather than limiting the present invention.

[0035] First make the gas head, the steps are as follows:

[0036] 1. Choose high-purity zirconia that is resistant to high temperatures;

[0037] 2. Grind high-purity zirconia to particles with a size of 75-10μm;

[0038] 3. Add 25% sodium hydroxide liquid to the zirconium oxide, and add the volume of the liquid to make the mixed zirconium oxide particles and the liquid in a viscous state, and stir evenly;

[0039] 4. Put the uniformly stirred high-purity zirconia into the forming mold;

[0040]5. Heat the mold to 800°C, place it under a pressure device above 500T, press for 4 hours, and open the mold when the temperature drops to 50°C to take out the part;

[0041] 6. Place the parts in a dark place for 10 days to allow the sodium hydroxide to continue to volatiliz...

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Abstract

The invention discloses a dispersing gas leading-in metal silicon purification method which aims at simplifying the traditional ventilation leading-in mode so as to cause the gas to fully react with the molten silicon and prolong the service life of the silicon container. The invention firstly uses micron grade fireresistant metal-oxide particles, formulates a dispersing microporous by high-pressure forming to get through a gas discharging head which is arranged in the center of the bottom of the silicon container; a gas bottom conduit passes through the bottom of the silicon container so as to connect a gas source; and a gas control valve is arranged at the combination part of the gas source. According to the gas type and the molten silicon volume, the intake pressure is adjusted, taking the molten silicon surface not forming significantly boiling as better, and simultaneously, the gas supply can be stopped or the gas type can be changed. After each operation is finished and the residue at the container wall is removed, the silicon container can be used continuously. The invention overcomes the disadvantage that the existing gas discharging head is easy to be obstructed when the gas supply is stopped; the practice proves that the gas discharging head which is manufactured with the method can continue to be used for 50 times when the oxygen is used, and 100 times when the argon is used.

Description

technical field [0001] The invention relates to a gas introduction method in the metal purification process, in particular to a gas introduction method in the metal silicon purification process. Background technique [0002] In recent years, demand for silicon as a solar cell material has rapidly increased due to heightened concerns about energy / environmental issues such as the consumption of fossil fuel energy and global warming issues. With the rapid development of the photovoltaic industry, the growth rate of polysilicon demand for solar cells is higher than that of semiconductor polysilicon. In 1994, the total output of solar cells in the world was only 69MW, but in 2004 it was close to 1200MW, an increase of 17 times in just 10 years. Experts predict that the solar photovoltaic industry will surpass nuclear power to become one of the most important basic energy sources in the first half of the 21st century. [0003] At present, there are three main sources of solar po...

Claims

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Application Information

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IPC IPC(8): C01B33/037C04B35/66C04B35/01C04B35/622
Inventor 郑智雄
Owner NAN AN SANJING SOLAR POWER
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