5results about How to "Good voltage stabilization effect" patented technology

The application discloses an embedded voltage-stabilized heat-dissipation PCB structure with a thermoelectricity synergic regulation layer and a preparation method thereof. The structure comprises at least one PCB inner layer and a chip power supply pad arranged on the inner layer, and a ring-shaped or C-shaped thermoelectric material pattern (ZT>0.5 at room temperature) is embedded in a region corresponding to the chip power supply pad directly below the inner layer. A first end of the thermoelectric material pattern is electrically connected to a power supply layer, and a second end is electrically connected to a grounding layer or a heat-dissipation through hole. The application utilizes the temperature difference during the operation of a chip to drive the thermoelectric material to generate a reverse electromotive force to inhibit power supply ripple, and simultaneously utilizes the Peltier effect to actively pump heat, so that the inner layer is integrated with voltage stabilization and heat dissipation. The power supply ripple can be reduced by 25% to 42% and the surface temperature of the chip can be reduced by 11 DEG C to 14 DEG C by using the PCB structure. The application directly integrates the thermoelectric function in the PCB inner layer, does not occupy the surface layer area, and is suitable for the packaging substrate of high-performance computing chips.

The embodiment of the present disclosure relates to the semiconductor field, and provides a semiconductor structure and a preparation method thereof, which comprises: a substrate comprising a device layer, a buried power supply track and a through silicon via, the through silicon via being connected with the device layer through the buried power supply track; a power supply network layer arranged on the substrate, the power supply network layer comprising at least one layer of a first power supply array and at least one layer of a second power supply array, the first power supply array being connected with the buried power supply track through the through silicon via; and a capacitor structure arranged between the first power supply array and the second power supply array and connected with the first power supply array and the second power supply array through a lower electrode and an upper electrode of the capacitor structure respectively.

The utility model discloses a double-pipeline centralized gas supply system of a ball mill. The system consists of at least one ball mill unit, a gas source system unit, a main pipeline unit, a branch pipeline unit and a PLC (Programmable Logic Controller), the air source system unit supplies air to a pneumatic clutch and a gear lubricating device in the ball mill unit; the system comprises a first air compressor, a second air compressor and a third air compressor, the first air compressor is connected with a first air storage tank through a first air source pipeline, the first air source pipeline is connected with a first pressure transmitter and a first electric ball valve, and the second air compressor is connected with a second air storage tank through a second air source pipeline. A second air source pipeline is connected with a second pressure transmitter and a second electric ball valve, and a third air compressor is connected with a third pressure transmitter; and the PLC is connected with each electric control component in the gas source system unit and the branch pipeline unit through cables. The utility model has the advantages of compact arrangement of connecting pipelines, high air supply efficiency, obvious energy-saving effect and good pressure stabilizing effect, and can ensure the efficient and stable operation of the ball mill.

The application is suitable for the field of silicon-based radio frequency and millimeter wave integrated circuit technology, and provides a satellite distributed configuration numerical control unit, a micro single sheet and an antenna unit, which comprises a decoupling capacitor module, a main control module and a distributed satellite module; the positive electrode of the decoupling capacitor module and the power supply pin of the main control module are connected with the power supply pin of the numerical control unit, and the negative electrode of the decoupling capacitor module and the ground pin of the main control module are connected with the ground pin of the numerical control unit; the distributed satellite module comprises a first satellite sub-module, a second satellite sub-module, a third satellite sub-module and a fourth satellite sub-module, and the connection mode of the first satellite sub-module with the main control module, the connection mode of the second satellite sub-module with the main control module, the connection mode of the third satellite sub-module with the main control module and the connection mode of the fourth satellite sub-module with the main control module are the same. The numerical control unit has the bandwidth universality suitable for various microwave bands and the universality suitable for various semiconductor manufacturing processes.

The invention relates to the field of display devices, and provides a gate drive circuit and a display device.The gate drive circuit is provided with cascaded shift register units, each shift register unit comprises eight transistors, two capacitors, a signal input end, a signal output end and three time sequence control ends, and the first transistor is of a double-gate structure. According to the invention, the plurality of transistors are respectively controlled by adopting the multi-time sequence control signals, so that the accurate control of the gate signals is realized. The bigrid transistor in the shift register unit can flexibly respond to the change of a time sequence control signal and an input signal, so that a signal transmission path is accurately switched at different moments, and the time sequence accuracy of grid driving is ensured. The gate drive circuit can stably work in the high-resolution display device, normal turn-on and turn-off of the transistor are ensured, the transmission efficiency and time sequence stability of a gate signal are effectively improved, and finally higher image display quality is achieved.