High-voltage element and manufacturing method therefor

A technology of high-voltage components and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of uneven oxidation rate on the surface of the substrate and uneven thickness of the silicon oxide layer, and achieve improved collapse characteristics and uniform thickness , the effect of improving reliability

Inactive Publication Date: 2009-03-25
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the oxidation rate of the substrate surface is not uniform, so that the thickness of the formed silicon oxide layer is not uniform

Method used

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  • High-voltage element and manufacturing method therefor
  • High-voltage element and manufacturing method therefor
  • High-voltage element and manufacturing method therefor

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Embodiment Construction

[0057] Figure 1A to Figure 1C It is a flow sectional view of a manufacturing method of a high-voltage element according to an embodiment of the present invention.

[0058] Please refer to Figure 1A , providing a substrate 100, the material of the substrate 100 is, for example, a semiconductor such as silicon, or silicon-on-insulator (SOI). In one embodiment, the substrate 100 is silicon with P-type doping. In an embodiment, a well region such as an N-type well or / and a P-type well region (not shown) is further formed in the substrate 100 . Next, isolation structures 102 , 103 are formed in the substrate 100 to define active regions 130 , 132 , 134 . A method for forming the isolation structures 102 and 103 is, for example, a shallow trench isolation (STI) method.

[0059] Next, a patterned mask layer 104 is formed on the substrate 100 , which has an opening 107 , exposing the surface of the active region 132 between the inner sides 102 a , 103 a of the isolation structures ...

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Abstract

The invention discloses a high-voltage element and a manufacturing method thereof. The high-voltage element comprises a grid electrode, two source electrode / drain electrode regions, and a compound gate dielectric layer; the grid electrode is positioned on a substrate; the two source electrode / drain electrode are arranged inside the substrate on two sides of the grid electrode respectively; and the compound gate dielectric layer, which is arranged between the grid electrode and the substrate, at least includes at least two continuous films, wherein, one film is stacked on the other film, and the two films extend from one side of the grid electrode to the other side thereof respectively, and, as a combination of thermal oxide and a chemical vapor deposition layer, either continuous layer is a uniform gate dielectric layer.

Description

technical field [0001] The invention relates to an integrated circuit and its manufacturing method, and in particular to a high-voltage element and its manufacturing method. Background technique [0002] Metal-oxide-semiconductor transistors are the most basic electronic units in semiconductor components. A typical MOS transistor includes a gate, a gate oxide layer, and source / drain regions. The gate is located above the substrate and isolated from the substrate by a gate oxide layer. The source / drain region is a doped region with the same doping, located in the substrate on both sides of the gate. [0003] A typical method for forming the gate oxide layer is to form a silicon oxide layer on the surface of the substrate exposed to oxygen environment through a thermal oxidation process. However, the oxidation rate of the substrate surface is not uniform, so that the thickness of the formed silicon oxide layer is not uniform. In particular, the oxidation rate of the substr...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/51H01L29/423H01L21/336H01L21/28
Inventor马云涵李明宗梁世明陈辉煌
OwnerUNITED MICROELECTRONICS CORP