Polycrystalline-silicon carbide lamination thin-film solar cell

Abstract

The invention discloses a polycrystalline silicon and silicon carbide stacked film solar cell, and belongs to the technical field of solar cells. The solar cell is characterized in that a glass substrate or a stainless steel substrate is taken as a substrate for the solar cell; and the solar cell comprises a transparent conductive oxide layer, the deposition of which is triggered by the magnetronsputtering, and two stack-connected film sub-solar cells prepared by using the hot filament chemical vapor deposition method on the substrate, wherein, one sub-cell is composed of a p-type silicon carbide layer / n-type silicon carbide layer, and the other sub-cell is composed of a p-type polycrystalline silicon layer / n-type polycrystalline silicon layer. The invention is characterized in that the two silicon-based materials of different band gap widths are in stack-connection with each other, so that the availability of solar spectrum and the photoelectric conversion efficiency are improved. With the inexpensive substrate and a low cost film growing source material, the invention reduces the cost of the solar cell, and gains a consequent competitive edge against a crystalline silicon solarcell.

Description

Polysilicon-Silicon Carbide Stacked Thin Film Solar Cell technical field The invention relates to a solar cell, in particular to a laminated thin-film solar cell which is formed by stacking two sub-cells of polycrystalline silicon and silicon carbide and can absorb broadband solar energy. Background technique Solar energy is the cleanest and most abundant energy resource bestowed by nature. At present, the conversion efficiency of commercial polysilicon solar cells is mostly around 15%. Due to the impact of rising prices of silicon raw materials, more than 55% of the cost of polysilicon solar cells is spent on silicon material substrates. From the perspective of commercial products, people have been vigorously developing low-cost, high-efficiency, large-area silicon thin-film solar cells. Since the bandgap width of silicon material is 1.12eV, the p-n junction formed by it only has a strong absorption effect on solar photons slightly higher than this energy, and the conver...

AI Technical Summary

Problems solved by technology

Since the bandgap width of silicon material is 1.12eV, the p-n junction formed by it only has a strong absorption effect on solar photons slightly higher than this energy, and the conversion efficiency of single-junction solar cells made of silicon thin films is generally lower than that of solar photons. 10%

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