Gallium nitride based transistor structure with high electron mobility

Abstract

A gallium nitride-based high electron mobility transistor structure comprises: a substrate; a low temperature nucleating layer is produced on the substrate; a gallium nitride-based high resistivity layer is produced on the low temperature nucleation layer; an indium gallium nitride insertion layer is produced on the gallium nitride-based high resistivity layer; a low temperature gallium nitride isolation layer is produced on the indium gallium nitride insertion layer; a high mobility gallium nitride layer is produced on the low temperature gallium nitride isolation layer; an aluminum nitride insertion layer is produced on the high mobility gallium nitride layer; an aluminium gallium nitride barrier layer is produced on the aluminum nitride insertion layer; a gallium nitride cap layer is produced on the aluminium gallium nitride barrier layer, and the gallium nitride cap layer effectively inhibit the current collapse effect.

Description

technical field [0001] The invention belongs to the field of semiconductor science and technology, in particular to a structure of a gallium nitride-based high electron mobility transistor. Background technique [0002] GaN-based high electron mobility transistors have the characteristics of high temperature, high frequency, high power and radiation resistance, can work in harsh environments, and have broad application prospects in radar, satellite communication, wireless communication and other fields. [0003] The principle of gallium nitride-based high electron mobility transistors is: due to the conduction band discontinuity of the two materials gallium nitride and aluminum gallium nitride, and due to the spontaneous polarization and piezoelectric polarization effects of these two materials, in A triangular potential well is formed at their interface, thereby forming a two-dimensional electron gas in the triangular potential well. Since the two-dimensional electron gas a...

AI Technical Summary

Problems solved by technology

In this traditional structure, a triangular potential well is formed at the heterojunction of AlGaN and GaN. The potential barrier on one side of the gallium buffer layer is lower, and the electrons in the channel will cross the potential barrier on the side of the gallium nitride buffer layer in the triangular potential well, which will deteriorate the device performance; The aluminum composition is low, so the increase of the conduction band discontinuity parameter on the AlGaN side at the interface between AlGaN and GaN heterojunction is limited, and the inhomogeneity of the alloy composition in AlGaN has a negative impact on The scattering effect of the traditional structure makes it difficult to further improve the electron mobility and the performance of the corresponding device.

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