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Production method of flash memory element

A pattern and semiconductor technology, applied in the field of manufacturing flash memory devices, can solve problems such as gaps and difficulties

Inactive Publication Date: 2009-04-29
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This reduction in cell size can lead to difficulties in important processes such as patterning the cells and creating voids during gap filling.

Method used

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  • Production method of flash memory element
  • Production method of flash memory element
  • Production method of flash memory element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] A method of manufacturing a flash memory device according to an embodiment will be described below with reference to the accompanying drawings.

[0015] Such as image 3 As shown, first gate oxide film 12 may be formed on and / or over semiconductor substrate 10 to protect devices formed on and / or over semiconductor substrate 10 . First nitride film 14 may then be formed on and / or over first gate oxide 12 . The first nitride film 14 may be made of a silicon nitride film or an oxynitride film.

[0016] Such as Figure 4 As shown, the first gate oxide film 12 and the first nitride film 14 can then be patterned to expose the semiconductor substrate 10 and simultaneously form the first gate oxide film pattern 16 and the first nitride film pattern 18 . A photoresist pattern may be formed on and / or over the first nitride film pattern 14 through an exposure process and a development process, and then the first gate oxide film pattern 16 and the first gate oxide film pattern 1...

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Abstract

A method of manufacturing a flash memory device that may include forming a dielectric film pattern on a semiconductor substrate; etching the semiconductor substrate using the dielectric film pattern as a mask to form a trench; forming a first dielectric film on the semiconductor substrate including the trench; performing a wet etching process on the semiconductor substrate formed with the first dielectric film; forming a second dielectric film on the semiconductor substrate; performing a planarization process on the first and second dielectric films; and removing the dielectric film pattern. Therefore, a generation of void may be prevented when forming a device isolation film and also when forming an interlayer dielectric film.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0062649 (filed June 26, 2007) under 35 U.S.C §119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device, in particular to a method for manufacturing a flash memory device. Background technique [0003] A flash memory device is a nonvolatile storage medium that does not damage stored data even when power is cut off. A flash memory device has an advantage of relatively high processing speed in aspects such as recording, reading, and erasing. Therefore, the flash memory device is widely used in data storage of motherboards of PCs, set-top boxes, printers, and network servers. Flash memory devices are recently used in devices such as digital cameras, cell phones, and the like. However, as the demand for highly integrated devices increases, the size of a unit cell (unit cell) of a flash memory device is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762H01L21/768H01L21/31H01L21/8247H10B69/00
CPCH01L27/11521H01L21/28273H01L27/115H01L29/40114H10B69/00H10B41/30H01L21/31051H01L21/76838
Inventor 金成珍
Owner DONGBU HITEK CO LTD