Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

TFT-LCD pixel structure and method for manufacturing same

A technology of pixel structure and manufacturing method, used in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve the problems of large area and wide distribution of rubbing alignment shadow area, and avoid bad defects, distribution concentration, and liquid crystal alignment quality. improved effect

Active Publication Date: 2011-02-02
K TRONICS (SUZHOU) TECH CO LTD +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to provide a TFT-LCD pixel structure and its manufacturing method, which can effectively solve the technical defects of the existing pixel structure, such as the large area and wide distribution of the friction orientation shadow area, and improve the picture quality and product yield.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • TFT-LCD pixel structure and method for manufacturing same
  • TFT-LCD pixel structure and method for manufacturing same
  • TFT-LCD pixel structure and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] figure 1 It is a structural schematic diagram of the first embodiment of the TFT-LCD pixel structure of the present invention. Such as figure 1 As shown, the TFT-LCD pixel structure of this embodiment includes a thin film transistor 1, a gate line 2, a data line 3 and a pixel electrode 4, wherein the gate line 2 is arranged horizontally and is located in the middle of the pixel area, and the data line 3 is perpendicular to the gate line 2 set, and located outside the pixel area (such as figure 1 on the left side of the pixel area), several thin film transistors 1 are arranged outside the pixel area (such as figure 1The left side of the gate line) is connected to the pixel electrode 4 formed in the pixel area, and the overlapping part of the pixel electrode 4 and the gate line 2 forms a storage capacitor. Specifically, several thin film transistors 1 are arranged on the gate electrode line 11 outside the pixel area, and the gate electrode line 11 is vertically arr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a TFT-LCD pixel structure and a manufacturing method thereof. The TFT-LCD pixel structure comprises a pixel electrode formed in a pixel area, and further comprises a grid line arranged at the middle part of the pixel area in parallel, a data line vertically arranged relatively to the grid line and positioned at the outer side of the pixel area, and a plurality of thin film transistors respectively arranged at the outer side of the pixel area and connected with the pixel electrode. Through arranging a plurality of thin film transistors at the outer side of the pixel electrode, the invention effectively prevents the bad defect in the frictional orientation process of an oriented film on the premise of improving the operating reliability of a pixel, thereby the imagequality of the product is obviously improved and the yield rate of the product is improved. In addition, the data line is arranged at the outer side of the pixel electrode in the invention; the grid electrode line is narrower than the grid line in the prior art; and the occupied area of the thin film transistor is reduced, thereby the opening rate is improved.

Description

technical field [0001] The invention relates to a thin film transistor liquid crystal display, in particular to a TFT-LCD pixel structure and a manufacturing method thereof. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) has the characteristics of small size, low power consumption, no radiation, and relatively low manufacturing cost, and occupies a dominant position in the current flat panel display market. At present, TFT-LCD tends to be larger and larger, and the size of a single pixel is also getting larger and larger. The defect of a pixel (bright or vanishing point) will obviously affect the picture quality, so for large TFT-LCD, not only need to have Higher resolution and high-quality picture, and need to have higher single pixel work reliability. [0003] Figure 10 It is a schematic diagram of a TFT-LCD pixel structure in the prior art, and it is a technical solution in which four thin film transistors are arranged in a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1362H01L27/12H01L21/77H01L21/70
Inventor 洪美花夏子祺
Owner K TRONICS (SUZHOU) TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products