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Transparent conductive film production method

A technology of transparent conductive film and transparent substrate, which is applied in the direction of electrical digital data processing, input/output process of data processing, ion implantation plating, etc. The effect of over-rate and low sheet resistance

Inactive Publication Date: 2009-05-13
北京东方新材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

CAO with lower refractive index (CuAlO 2 ) is 1.54, but the problem of CAO is that the resistivity is too high and high temperature annealing is required, so it is difficult to realize industrialization
In this case, it is difficult to obtain a higher visible light transmittance with conventional anti-reflection coatings.

Method used

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  • Transparent conductive film production method
  • Transparent conductive film production method

Examples

Experimental program
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Effect test

Embodiment 1

[0019] Such as figure 2 As shown, the substrate is a PET film 1 with a thickness of 125 microns and an average transmittance of 91.1% in the visible light range. A buffer layer (silicon dioxide film 2, with a thickness of 4 nm), a low-refractive index transparent conductive film (ITO film 3, with a thickness of 67 nm), and a high-refractive index transparent conductive film (IZO film 4, with a thickness of 4 nm) were sequentially deposited by sputtering. It is 57 nanometers), low refractive index transparent conductive film (ITO film 5, thickness is 70 nanometers). The sheet resistance of the transparent conductive film prepared by the method is 52 ohms, and the average transmittance in the range of visible light is 90.4%.

Embodiment 2

[0021] Such as image 3 As shown, the substrate is a PET film 11 with a thickness of 125 microns and an average transmittance of 91.1% in the visible light range. A buffer layer (silicon dioxide film 12, with a thickness of 4 nm), a high-refractive index transparent conductive film (IZO film 13, with a thickness of 5 nm), and a low-refractive index transparent conductive film (ITO film 14, with a thickness of 5 nm) were sequentially deposited by sputtering. 56 nanometers), high refractive index transparent conductive film (IZO film 15, thickness is 57 nanometers), low refractive index transparent conductive film (ITO film 16, thickness is 71 nanometers). The sheet resistance of the transparent conductive film prepared by the method is 53 ohms, and the average transmittance in the range of visible light is 90.5%.

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Abstract

The invention discloses a preparation method for a transparent conductive film. Through the deposition on a transparent base plate in a physical vapor deposition mode, the preparation method prepares a multilayer film consisting of at least a transparent conductive film layer with a high refractive rate and at least a transparent conductive film layer with a low refractive rate; and the transparent conductive film layers are alternated. The visible light transmission rate of the transparent conductive film is improved through the multilayer film consisting of alternated high-refractive-rate films and low-refractive-rate films. Moreover, the multilayer transparent conductive film can have greater thickness and can have lower square resistance under the condition of higher resistivity.

Description

technical field [0001] The invention relates to a preparation method of a transparent conductive film with low sheet resistance and high visible light transmittance. Background technique [0002] Transparent conductive films are widely used in touch screens, liquid crystals and other fields. The requirement for the transparent conductive film is that the sheet resistance should be as low as possible, and the average transmittance in the visible light range should be as high as possible. [0003] The substrate used for the transparent conductive film is generally glass or organic thin film, and its refractive index is between 1.5-1.6. Most of the common transparent conductive films have a high refractive index, such as ITO (In 2 o 3 : Sn) is 1.9, IZO (Zn 2 In 2 o 5 ) is 2.4. CAO with lower refractive index (CuAlO 2 ) is 1.54, but the problem of CAO is that the resistivity is too high and high-temperature annealing is required, so it is difficult to realize industriali...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/22G06F3/041G02F1/133
Inventor 张云龙徐健程云立承高建
Owner 北京东方新材科技有限公司
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