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Image sensor and fabricating method thereof

A device and insulating layer technology, applied in the field of semiconductor devices, can solve the problems of image sensor structure realization and pixel size reduction, and achieve the effects of optimizing sensitivity, increasing thickness margin, and improving light-gathering efficiency

Inactive Publication Date: 2009-06-03
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, image sensor structures reach design limits when metal lines are required to have a thickness less than the required minimum thickness specified by other design methods
Therefore, a pixel pitch limitation arises and prevents further reductions in pixel size

Method used

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  • Image sensor and fabricating method thereof

Examples

Experimental program
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Embodiment Construction

[0016] Figure 2A to Figure 2F is a cross-sectional view of a method of manufacturing an image sensor according to an embodiment.

[0017] see Figure 2A , a plurality of photodiodes 20 a , 20 b and 20 c may be formed over the semiconductor substrate 10 . Then, a device isolation layer (shallow trench isolation) 12 may be formed to isolate the plurality of photodiodes 20a, 20b, and 20c from each other. Alternatively, after the device isolation layer 12 is formed in the semiconductor substrate 10, the plurality of photodiodes 20a, 20b, and 20c may be formed. The first insulating layer 30 may be formed of a transparent material and located on and / or over the semiconductor substrate 10 in which the plurality of photodiodes 20a, 20b, and 20c are formed. A trench may be formed in a portion of the first insulating layer 30 by performing photolithographic etching using a mask. The trenches may be filled with a conductive substance (such as Al, Cu, etc.) to form contacts 36 . Met...

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PUM

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Abstract

An image sensor and fabricating method thereof may include a semiconductor substrate, a plurality of photodiodes formed on and / or over the semiconductor substrate, a first insulating layer formed on and / or over the semiconductor substrate including the plurality of photodiodes, at least one metal line formed on and / or over the first insulating layer, a second insulating layer having a plurality of wells formed on and / or over the plurality of photodiodes, a plurality of color filters formed by embedding color filter layers in a plurality of the wells, and a plurality of microlenses formed on and / or over the color filters.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2007-0123619 filed on November 30, 2007 under 35 USC § 119, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention relates to a semiconductor device, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0003] In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors can be classified into CCD (Charge Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) devices. The image sensor includes a light receiving area having a photodiode to sense light, and a logic area that processes the sensed light into an electrical signal that can be converted into data. Many efforts have been made to increase photosensitivity. [0004] figure 1 is a cross-sectional view of the CMOS image sensor 1, showing a light receiving area including ph...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14621H01L27/14627H01L27/14645H01L27/14632H01L27/14687H01L27/146
Inventor 尹盈提
Owner DONGBU HITEK CO LTD
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