OTP construction and manufacturing method thereof
A technology of silicon oxide layer and silicon oxide, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems that the OTP structure cannot meet the high-density storage function, and achieve area saving, production cost reduction, and improved The Effect of Storage Density
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[0015] Such as figure 1 As shown, the OTP structure of the present invention includes a substrate. Above the substrate are a silicon oxide-silicon nitride-silicon oxide layer and a polysilicon layer. On both sides of the polysilicon on the substrate are the source and drain electrodes. The thickness of the silicon oxide layer on both sides of the silicon nitride-silicon oxide layer is greater than 50 angstroms.
[0016] When writing data to the OTP structure of the present invention, electrons will be trapped in the nitride layer of the silicon oxide-silicon nitride-silicon oxide layer, and are not easy to move. When the source terminal is applied with a low potential, the drain disconnection is increased. At the potential, the hot electron injection occurs on the side near the drain end, and the written electrons are stored on the side of the silicon oxide-silicon nitride-silicon oxide layer. When a high potential is applied to the source terminal and a low potential is applied ...
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