Unlock instant, AI-driven research and patent intelligence for your innovation.

Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition

A technology of photoresist and composition, which is applied in the field of preparing liquid crystal displays or semiconductor devices, and achieves the effect of excellent corrosion inhibition ability

Active Publication Date: 2011-04-06
LG CHEM LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the problem is that removal by using the above stripper composition is not ideal due to significant curing
However, the above-mentioned composition has a disadvantage in that it is poor in stripping ability at low temperature despite low corrosion to metals
[0016] Furthermore, all of the above compositions have disadvantages in that the stripping time for the photoresist during the stripping process is 10 minutes or more and the Corrosion on aluminum or copper lines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition
  • Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition
  • Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0069] When liquid crystal displays and semiconductor devices are prepared using the preparation method according to the present invention, when the photoresist is stripped, the substrate with fine patterns is neither corroded nor damaged, and the amount of remaining photoresist is small.

[0070] The present invention provides a photoresist stripper composition capable of easily removing a photoresist film denatured during a photolithography process at high and low temperatures in a short period of time even with only water instead of isopropanol Rinsing is performed with an intermediate rinsing solution that does not corrode the conductive film and insulating film made of aluminum, aluminum alloy, copper or copper alloy under the photoresist either.

[0071] Especially, in the present invention, in the stripping process of stripping the photoresist, it is possible to completely strip off the denatured photoresist film at low temperature in a short time due to the excessive ph...

Embodiment 1～33

[0075] Using the components and constituent ratios described in Table 1 below, stirring was carried out at normal temperature for 2 hours and the resultant was filtered to obtain particles with a size of 0.1 μm. Thus, a stripper solution was prepared.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a photoresist stripper composition, a method of stripping a photoresist by using the photoresist stripper composition, and a method of producing a liquid crystal display device or a semiconductor device. During a lift-off process as well as a known process of stripping the photoresist, the photoresist stripper composition is capable of completely stripping a photoresist film denatured due to an excessive photolithography process at low temperatures within a short period, does not damage a conductive film or an insulating film at a lower part of the photoresist even if rinsing is performed by only using water and not isopropanol, which is an intermediate rinsing solution, and has an excellent corrosion inhibiting ability to the conductive metal film or the insulating film at the lower part of the photoresist.

Description

technical field [0001] The invention relates to a photoresist stripper composition, a method for stripping photoresist with the photoresist stripper composition and a method for preparing a liquid crystal display or a semiconductor device. [0002] This application claims priority from Korean Patent Application No. 10-2006-0047668 filed in KIPO on May 26, 2006, the entire contents of which are incorporated herein by reference. Background technique [0003] A method of producing a fine circuit of a semiconductor integrated circuit or a liquid crystal display includes: on a conductive metal film made of aluminum, aluminum alloy, copper or copper alloy formed on a substrate or on a film such as a silicon dioxide film or a silicon nitride film Coating photoresist evenly on the insulating film, selectively exposing and developing the photoresist to form a photoresist pattern, and conducting metal film or insulating film by using the patterned photoresist film as a mask Wet etch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027
CPCG03F7/425
Inventor 韩熙朴珉春金璟晙徐圣佑权赫俊安庆昊崔棅圭闵盛晙黄智泳
Owner LG CHEM LTD