Method for etching bottom layer anti-reflection layer and manufacturing wire laying slot

Abstract

A method of etching bottom anti-reflection layers includes steps of adding a magnetic field while etching bottom anti-reflection layers on a wafer, which leads the etching rate of the bottom anti-reflection layer on the edge of the wafer to be faster than that of the bottom anti-reflection layer at the center of the wafer. The invention further discloses a method of manufacturing wiring trenches. The method of etching bottom anti-reflection layers and the method of manufacturing wiring trenches are capable of increasing the precision of wiring trench manufacture.

Description

technical field [0001] The invention relates to a method for etching a bottom anti-reflection layer and making wiring grooves. Background technique [0002] As the integration level of semiconductor elements increases, the line width of semiconductor elements becomes smaller and smaller, and the control of critical dimensions becomes more and more important. In the photolithography process, due to the level difference of the wafer surface, when the photoresist covers the wafer surface, the thickness of the photoresist layer will vary according to the planarization characteristics of the photoresist. When the lithography light travels in the photoresist, the reflected light on the wafer surface and the incident light will form a gain / loss interference phenomenon, thus producing the so-called swing effect. The uneven thickness of the above-mentioned photoresist and the swing effect will both cause adverse effects of critical dimension changes. [0003] Due to the widespread ...

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Problems solved by technology

[0005] The invention provides a method for etching the bottom anti-reflection layer and a method for making a wiring groove, which solves the problem in the prior art that a mesa is formed in the process of forming a wiring groove, thereby affecting the accuracy of the wiring groove process

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