Halbleitervorrichtung
A semiconductor and component technology, applied in the field of semiconductor devices, can solve problems such as incorrect operation, and achieve the effect of suppressing the generation of displacement current and limiting the incorrect operation of the circuit
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no. 1 example
[0043]The configuration of the semiconductor device of the first embodiment is described below with reference to FIGS. 1 to 3 . In the following description, it is assumed that the front surface side of the semiconductor device corresponds to the side depicted in the upper side of FIG. 1 , and the rear surface side of the semiconductor device corresponds to the side depicted in the lower side of FIG. 1 .
[0044] As shown in FIG. 1 , a semiconductor device is formed by using a silicon-on-insulator SOI substrate 104 including a support substrate 102 and an SOI layer 101 bonded through a buried oxide film 103 . For example, SOI layer 101 is made of P-type silicon. SOI layer 101 is used as active layer 101 . Buried oxide film 103 serves as buried insulating film 103 .
[0045] The SOI layer 101 is located on the front surface side of the semiconductor device, and is formed by grinding a silicon substrate to a predetermined thickness. In the SOI layer 101, a plurality of trench...
no. 2 example
[0064] Differences between the semiconductor device of the present embodiment and that of the first embodiment include a configuration for setting the potential of the supporting substrate 102 .
[0065] FIG. 6 is a cross-sectional view showing a semiconductor device (ie, HVIC) according to the present embodiment. As shown in FIG. 6, the semiconductor device has a second terminal (not shown) that receives the reference potential of the high potential reference circuit portion HV. The second terminal and the second portion of the support substrate 102 are electrically connected to each other so as to have substantially the same potential. The second portion of supporting substrate 102 is disposed at a position corresponding to high potential reference circuit part HV, or in other words, the second part is disposed opposite to high potential reference circuit part HV with respect to buried oxide film 103 . More specifically, the base 141 having the conductive pattern 140 is bon...
no. 3 example
[0074] Differences between the semiconductor device of the present embodiment and that of the first embodiment include the arrangement of the support substrate 102 . In the present embodiment, the support substrate 102 has a third portion which is located at a position corresponding to the part outside the element.
[0075] FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 10 and showing the semiconductor device according to the present embodiment. FIG. 10 is a schematic diagram showing an element layout on the rear surface side of the semiconductor device shown in FIG. 9 .
[0076] As shown in FIGS. 9 and 10 , the element outside portion 150 is located outside the outermost trench insulation member 105 . The third portion of the support substrate 102 is located at a position corresponding to the element outer side 150 . The third portion of support substrate 102 is opposite to element outer side 150 with respect to buried oxide film 103 . More specifically, t...
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