Tubular target sputtering equipment with lengthened tubular anode

Abstract

The invention provides a tube-shaped target sputtering apparatus with an elongated tube-shaped anode, which comprises a water tank, a tube-shaped target, an elongated tube-shaped anode, and a plurality of magnets, wherein a water interlayer is arranged in an annular wall of the water tank; the outer annular wall of the tube-shaped target is closely contacted with the inner annular wall of the water tank; the bottom wall of the elongated tube-shaped anode is provided with a plurality of sputtering air inlets and is matched with an anode cover which is connected with an air inlet pipeline; the plurality of magnets are around the circumference of the annular wall of the water tank; the elongated tube-shaped anode is made of an oxygen-free copper material, and an insulating ring of the water tank and the anode cover are made of a polyfluortetraethylene material in an insulating way. In the process of preparing a complicated oxidant film, particularly a LaBaCuO film such as a high temperature YBCO, the tube-shaped target sputtering apparatus with the elongated tube-shaped anode can remarkably improve the negative oxygen ion bombardment and the negative influence such as the accumulation and crumbling of sputtering substances, and has the functions of remarkably improving the growth quality and the performance of the film.

Description

technical field [0001] The invention relates to a cylindrical target sputtering system, in particular to a cylindrical target sputtering system used in the preparation of complex oxide thin films. Background of the invention [0002] The cylinder target sputtering system is a technology adopted to deal with the negative oxygen ion bombardment phenomenon in the sputtering process of complex oxides. The method is to change the original planar target sputtering to have a certain thickness The cylindrical sputtering target, the ionized Ar gas bombards the inner wall of the cylindrical target during the sputtering process, and falls on the heated substrate for film deposition. The advantage of this method is that at each position of the sputtering target, the positional relationship between the sputtering product and the substrate is in an off-axis state, thereby avoiding negative oxygen ions bombarded by high-energy Ar atoms from the target. Directly bombard the surface of the ...

AI Technical Summary

Problems solved by technology

After long-term experimental research, it has been found that even when no positive bias is applied, the loading of the anode is an effective means to eliminate the bombardment of negative oxygen ions; at the same time, if the area of ​​the loaded anode is small, the ability to eliminate the bombardment of negative oxygen ions will be weakened; At the same time, the dispersed gaseous atoms attach to the anode very quickly under high temperature conditions, which is easy to form slag and other problems, which affects the film quality.

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