Light-emitting device, method of manufacturing the same, and display unit
A light-emitting device and light-emitting layer technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as difficult to handle and weak adhesion, so as to prolong life, prevent separation or change, and reduce defects Effect
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no. 1 example 1
[0040] figure 1is a sectional view of the display device according to the first embodiment of the present invention. The display device is used as an ultrathin organic light emitting display, and, for example, in the display device, the driving board 10 and the sealing board 20 face each other, and the entire facing surfaces are bonded together with an adhesive layer 30 made of thermosetting resin. The driving board 10 includes an organic light emitting device 10R emitting red light, an organic light emitting device 10G emitting green light, and an organic light emitting device 10B emitting blue light, which are integrally arranged in a matrix shape sequentially on a substrate 11, wherein the substrate 11 is made of an insulating material such as glass made with a TFT 12 and a flattening layer 13 therebetween.
[0041] A gate electrode (not shown) of the TFT 12 is connected to a scanning circuit (not shown), and a source electrode and a drain electrode (both not shown) are ma...
no. 2 example
[0092] Figure 14 A cross-sectional view showing a display device according to a second embodiment of the present invention. This display device is basically the same as the display device according to the first embodiment, except that instead of the adhesive layer 14A of the first electrode 14, the present display device includes the adhesive layer together with an auxiliary reflective film 14D which also has a reflective light-emitting layer 16B in it. The light generated and passed through the reflective layer 14B acts as an auxiliary reflective film. Therefore, the same components are denoted by the same reference numerals as in the first embodiment, and further descriptions are omitted.
[0093] The adhesive layer together with the auxiliary reflective film 14D is preferably made of metal, conductive oxide or at least one selected from chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), Titanium (Ti), aluminum (Al), magnesium (Mg) and molybdenum (Mo) are made...
example 1
[0105] As in the case of the second embodiment, an organic light emitting device is formed. At this time, the first electrode 14 has a structure in which an adhesive layer made of chrome with a thickness of 40 nm together with an auxiliary reflective film 14D, a reflective layer 14B made of a silver-containing alloy with a thickness of 36 nm, and an auxiliary reflective film 14B with a thickness of 7.5 nm. A barrier layer 14C made of ITO is laminated. Furthermore, the resonant wavelength of the above-mentioned resonant cavity (spectrum peak wavelength extracted from the second electrode 17) is set to 400nm˜800nm. In the resulting organic light emitting device, the reflectance of the first electrode 14 was determined in both cases. The results obtained are shown in Figure 17 .
[0106] As reference examples 1 to 5 related to this example, such as Figure 18 As shown, the first electrode 114 is the same as in the example except that the first electrode 114 includes only the...
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