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Image element structure of thin-film transistor LCD array substrates

A liquid crystal display and thin film transistor technology, applied in the field of pixel structure, can solve the problems that the parasitic capacitance part does not provide any protection measures, affects the quality and yield, and the DGS line is defective, so as to reduce the rate of defective lines, increase costs, and reduce The effect of production costs

Active Publication Date: 2009-08-12
K TRONICS (SUZHOU) TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the electrostatic breakdown of the parasitic capacitance occurs, it will cause the DGS line to be defective
[0005] The defect of the prior art is that: in the prior art, no protective measures are provided for the above-mentioned parasitic capacitance that is prone to electrostatic breakdown, and once broken down, it is difficult to repair, which will affect the quality and yield of products

Method used

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  • Image element structure of thin-film transistor LCD array substrates
  • Image element structure of thin-film transistor LCD array substrates
  • Image element structure of thin-film transistor LCD array substrates

Examples

Experimental program
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Effect test

Embodiment 1

[0023] This embodiment provides a pixel unit of a TFT-LCD array substrate, and the pixel structure is manufactured by five masking processes. The five-time mask process is an existing pixel structure manufacturing method. Its main process includes:

[0024] 1. Forming gate lines, gate line branches and gates on the substrate 00 through film formation, exposure, and etching processes;

[0025] 2. Deposit the first protective layer directly, and form the active layer pattern through film formation, exposure, and etching processes;

[0026] 3. Form data lines, source electrodes and drain electrodes through film formation, exposure, and etching processes;

[0027] 4. Form via holes through film formation, exposure, and etching processes;

[0028] 5. A pixel electrode is formed through film formation, exposure, and etching processes, and the pixel electrode is connected to the source through a via hole.

[0029] like Figure 3A As shown, the pixel structure described in this e...

Embodiment 2

[0037] This embodiment provides another pixel structure of a TFT-LCD array substrate, which is manufactured by four masking processes. The four-time mask process is also an existing pixel structure manufacturing method. Its main process includes:

[0038] 1. Forming the gate wire and the extension of the gate wire and the gate on the substrate 00 through film formation, exposure, and etching processes;

[0039] 2. Deposit the first protective layer directly, and form active layer patterns, data lines, source electrodes and drain electrodes through film formation, exposure, and etching processes;

[0040] 3. Via holes are formed through film formation, exposure, and etching processes;

[0041] 4. Forming the pixel electrode and the lead part through film formation, exposure and etching processes, wherein the pixel electrode is connected to the source through the via hole, and the lead part is connected to the extension part of the gate line through the via hole.

[0042] lik...

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Abstract

The invention relates to a pixel structure of a thin film transistor liquid crystal display array substrate, which comprises a pixel electrode, a grid wire and a data wire, wherein a parasitic capacitor is formed on the overlapping part of the grid wire and the data wire, the grid wire is also provided with an extending part, the extending part and the data wire form a protective capacitor which is arranged in parallel with the parasitic capacitor, and the distance between two electrodes of the protective capacitor is smaller than that of the parasitic capacitor. Because the pixel structure is provided with the protective capacitor, the pixel structure effectively reduces the wire defect ratio caused by ESD, improves the yield, reduces the production cost, and particularly plays a greater role in a liquid crystal display television product. Besides, the structure has simple design, occupies less display area and can be realized on the basis of the prior technological condition, and the cost is not increased in the development of a new product.

Description

technical field [0001] The invention relates to a pixel structure, in particular to a pixel structure of a thin film transistor liquid crystal display (TFT-LCD for short) array substrate, which belongs to the array technology of liquid crystal panels. Background technique [0002] Under the production conditions of the existing thin-film transistor liquid crystal display, electrostatic breakdown often occurs at the intersection (Cross) of the gate line (Gate Line) and the data line (Data Line), which leads to a short circuit of the data line and the gate line. (abbreviation: bad DGS line). [0003] like Figure 1A As shown, it is a schematic diagram of the existing pixel structure using five masking processes. Figure 1B for Figure 1A A cross-sectional view along the direction A-A in the middle. It can be seen from the figure that the pixel structure has a pixel electrode 11 , and a data line 12 and a gate line 13 are arranged in the layer structure between the substrate ...

Claims

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Application Information

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IPC IPC(8): G02F1/1362H01L27/12
CPCG02F1/136213G02F1/136286G02F2001/13606G02F1/13606G02F1/1335G02F1/1343
Inventor 何祥飞王威
Owner K TRONICS (SUZHOU) TECH CO LTD
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