Method for manufacturing semiconductor device, method for manufacturing display device, semiconductor device, method for manufacturing semiconductor element, and semiconductor element
A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as complex processes
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Embodiment approach 1
[0072] Figure 1-1 to Figure 1-11 , figure 2 as well as Figure 3-1 to Figure 3-5 It is a cross-sectional schematic diagram showing the manufacturing process of the semiconductor device according to the first embodiment.
[0073] According to (1) the production of monocrystalline silicon components (semiconductor components) ( Figure 1-1 to Figure 1-11 ), (2) the fabrication of the substrate of the monocrystalline silicon element after transferring the chip ( figure 2 ) and (3) fabrication of semiconductor devices ( Figure 3-1 to Figure 3-5 ) order will be described.
[0074] (1) Fabrication of monocrystalline silicon components ( Figure 1-1 to Figure 1-11 )
[0075] First, if Picture 1-1 As shown, a thermally oxidized film 2 is formed on a single crystal silicon substrate (single crystal silicon wafer) 1 using a flash oxidation method or the like.
[0076] Then, if Figure 1-2 As shown, boron 9 is ion-implanted into the interior of single-crystal silicon substr...
Embodiment approach 2
[0099] In this embodiment, the film thickness of the single crystal silicon layer 10 after etching to the height of the LOCOS oxide film 6 or below (the film thickness of the single crystal silicon layer immediately before the metal silicide is formed) is 80 nm, and the film thickness is 20 nm (single crystal silicon layer 10). 25% of the film thickness of the crystalline silicon layer) in place of the Ti layer 30 having a film thickness of 30 nm, the same as the first embodiment. Only the single crystal silicon layer with a film thickness of about 46 nm is consumed for the Ti layer with a film thickness of 20 nm, so that the single crystal silicon layer with a film thickness of about 34 nm remains.
[0100] Therefore, according to this embodiment, the same effect as that of Embodiment 1 can be obtained.
Embodiment approach 3
[0102] This embodiment is the same as Embodiment 1 except that the Ti layer 30 with a thickness of 30 nm is replaced with a cobalt (melting point: 1490° C.) layer with a thickness of 20 nm (13% of the thickness of the single crystal silicon layer). Only the single crystal silicon layer with a film thickness of approximately 70 nm is consumed for the cobalt layer with a film thickness of 20 nm, so that the single crystal silicon layer with a film thickness of approximately 80 nm remains.
[0103] Therefore, according to this embodiment, the same effect as that of Embodiment 1 can be obtained.
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