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Manufacturing method of target structure

A production method and target material technology, which can be applied in the direction of manufacturing tools, metal material coating process, ion implantation plating, etc., can solve the problems of poor compactness, and achieve the effect of strong resistance to heat deformation and high bonding tightness

Active Publication Date: 2011-08-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Taking tantalum target and copper back plate as an example, since tantalum is a relatively stable metal element, copper is an easily oxidized metal element, and oxidation will occur on the welding surface, resulting in poor welding tightness, and the target and back Boards are difficult to bond by direct diffusion soldering

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  • Manufacturing method of target structure
  • Manufacturing method of target structure
  • Manufacturing method of target structure

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Embodiment Construction

[0023] The inventors of the present invention have found that when making the target structure, if the properties of the target are relatively stable (for example, the melting point of the tantalum target is relatively high), and the properties of the back plate are relatively active (for example, the surface of the copper back plate is easily oxidized), it is better to use welding Direct welding of the target and the backplane will result in a poor combination of the two. In view of this, it is proposed to add a metal coating as an intermediate medium between the target and the back plate, so that the combination of the target and the back plate can be achieved through the metal coating that can be tightly combined with the target and the back plate at the same time. , to complete the fabrication of the target structure. Therefore, according to one aspect of the present invention, a target structure is provided, wherein a metal coating is included between the target and the b...

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Abstract

The invention provides a manufacturing method of a target structure. The method includes the following steps of: providing a target that is tantalum or tantalum alloy; using electroplating technology to form a metal plating on the welding surface of the target; and conducting diffusion welding on the metal plating and welding a back board to the target. Compared with the prior art, the method canrealize the reliable combination of the tantalum target and a copper back board and boost the quality of the target structure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a target structure. Background technique [0002] In the semiconductor industry, the target structure is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target structure is assembled to the sputtering base station, and has the effect of conducting heat. Currently, for example, metal tantalum (Ta) can be selected as the target material, and copper or aluminum material with sufficient strength and high thermal and electrical conductivity can be selected as the back plate material. [0003] During the sputtering process, the working environment of the target structure is relatively harsh, for example, the target structure has a relatively high working temperature, such as 300°C to 500°C; in addition, one sid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K103/12B23K103/10B23K103/08C23C14/34B23K103/18
Inventor 姚力军潘杰毛立鼎刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD