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Bottom grid thin film transistor and active array substrate

A technology of thin film transistors and bottom gates, applied in transistors, optics, instruments, etc., can solve problems such as poor reliability, and achieve the effect of improving reliability and heat dissipation rate

Active Publication Date: 2009-10-07
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The invention provides an active array substrate, which can solve the problem of poor reliability caused by self-heating

Method used

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  • Bottom grid thin film transistor and active array substrate
  • Bottom grid thin film transistor and active array substrate
  • Bottom grid thin film transistor and active array substrate

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Embodiment Construction

[0055] figure 1 It is a schematic top view of an active array substrate according to an embodiment of the present invention. Please refer to figure 1 , the active array substrate 100 includes a substrate 102 , a driving circuit 104 and an active array. The substrate 100 has an active area 108 and a peripheral circuit area 110 . The material of the substrate 110 is, for example, glass, plastic or other suitable materials. The active array is located on the substrate 100 and in the active area 108 , and is electrically connected to the driving circuit 104 . The active array includes a plurality of pixel structures 112 , a plurality of data lines 116 and a plurality of scan lines 114 electrically connected to the pixel structures 112 . Materials of the data lines 116 and the scan lines 114 are, for example, metal. Each pixel structure 112 is electrically connected to a data line 116 and a scan line 114 to be driven by the data line 116 and the scan line 114 . Each pixel str...

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Abstract

The invention discloses a bottom grid thin film transistor and an active array substrate. The bottom grid thin film transistor comprises grid, a gate insulating layer, a semiconductor layer, a plurality of source electrodes and a plurality of drain electrodes. The gate insulating layer is collocated on the grid. The semiconductor layer is collocated on the gate insulating layer and above the upper of the grid. The area proportionality of the semiconductor layer to the grid is about from 0.001-0.9. The source electrodes are electrically connected with each other, the drain electrodes are electrically connected with each other, and the source electrodes are electrically insulated with the drain electrodes.

Description

technical field [0001] The present invention relates to a thin film transistor and a substrate, and in particular to a bottom gate thin film transistor and an active array substrate. Background technique [0002] With the advancement of display technology, people can make their lives more convenient with the assistance of displays. In order to achieve the characteristics of lightness and thinness of displays, flat panel displays (fiat panel displays, FPDs) have become the current mainstream. Among many flat panel displays, a liquid crystal display (LCD) has superior characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. Therefore, the liquid crystal display is very popular among consumers. [0003] A liquid crystal display is mainly composed of an active array substrate, a color filter substrate and a liquid crystal layer between the two substrates. The active array substrate has an active area a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1362
Inventor 魏全生沈光仁黄章佑陈培铭刘圣超陈俊雄黄伟明
Owner AU OPTRONICS CORP