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Method for preparing polycrystalline silicon

A technology of polysilicon and silicon rods, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of undisclosed polysilicon, etc., and achieve the effects of improving deposition uniformity, gentle heating rate, and saving energy consumption

Inactive Publication Date: 2011-01-12
YINGLI ENERGY CHINA
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Problems solved by technology

However, in this patent, it is not disclosed how to obtain uniform polysilicon

Method used

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  • Method for preparing polycrystalline silicon
  • Method for preparing polycrystalline silicon
  • Method for preparing polycrystalline silicon

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Embodiment 1

[0058] Mix hydrogen and monosilane in a static mixer to obtain a first mixed gas, the purity of hydrogen is 99.999%, and the purity of monosilane is 99.999%. Then, the first mixed gas is continuously sent to the twelve-way preheater for preheating, and the preheating temperature is 260°C.

[0059] The preheated first mixed gas is sent into the reactor in twelve ways. The inner diameter of the reactor is 3 meters and the length is 3 meters. The reactor is also provided with a measuring device (not shown) for measuring the size of the silicon rod. Before the first mixed gas is sent into the reactor, the silicon rod is preheated to 260° C. through a heating mantle. Please refer to Table 1 for the silicon rod growth size process table formulated in this embodiment:

[0060] Table 1 Silicon rod growth size process

[0061]

[0062] According to the process table shown in Table 1, the mixing ratio of monosilane and hydrogen is adjusted in the range of 1:0.2~1:3 according to th...

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Abstract

The invention provides a method for preparing polycrystalline silicon, which comprises the following steps of: a) mixing silicon-containing gas which contains monosilane with auxiliary gas which contains hydrogen gas to obtain first mixed gas, b) preheating the first mixed gas at the temperature of 200 to 400 DEG C, and c) sending the preheated first mixed gas to a reactor to undergo pyrolytic reaction. The product of the pyrolytic reaction is deposited on a plurality of silicon bars positioned in the reactor so as to obtain the polycrystalline silicon. The silicon bars in the reactor are preheated to the temperature of 200 to 400 DEG C before the first mixed gas is sent into the reactor. Compared with the prior art, after the preheated mixed gas is sent into the reactor, the silicon barsreach the pyrolytic temperature at higher speed, thus being capable of speeding up the pyrolytic reaction. In addition, as the pyrolytic reaction is conducted to the mixed gas which is preheated, thetemperature rise of the silicon bars is gentle; therefore, the method not only improves the uniformity of deposition among the silicon bars, but also is beneficial to improving the ununiformity of deposition of each silicon bar.

Description

technical field [0001] The invention relates to a method for preparing silicon, in particular to a method for preparing polysilicon. Background technique [0002] More than 90% of semiconductor devices are made of silicon materials. High-purity polysilicon is the main raw material for the preparation of electronic components and solar cells, and is an important basic material for electronic information. [0003] At present, polysilicon is mostly prepared by thermal decomposition of silicon-containing gas or silicon-containing gas mixture. For example, the TCS method is currently a major method. In the TCS method, trichlorosilane SiHCl 3 As a raw material to prepare polysilicon, the main reaction equation is as follows: [0004] [0005] The TCS method includes the following steps: first use silica to refine metallurgical silicon, and then synthesize metallurgical silicon into trichlorosilane (SiHCl 3 ), trichlorosilane decomposes in the Siemens reactor to generate pol...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/029
Inventor 张月和薛明贾兵蔡春立王伟
Owner YINGLI ENERGY CHINA
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