Semiconductor memory device and manufacturing method thereof

Abstract

The invention discloses a semiconductor memory device, which comprises a source, a drain, two floating gate regions, a control gate, and a substrate pole, and the floating gate regions of the semiconductor memory device are used for storing charges. The invention further discloses a manufacturing method of the semiconductor memory device. The manufactured semiconductor memory device has the advantages of small unit area, simple manufacturing process and the like, and the use of the invention can reduce the manufacturing cost of a memory chip and improve the storage density.

Description

Technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor memory device; the present invention also relates to a semiconductor memory array and a method for manufacturing a chip using this device. Background technique [0002] Semiconductor memory is widely used in various electronic products. With the development of technology, the size of the memory is getting smaller and smaller, and the density is getting higher and higher. In the non-volatile memory, the memory uses the technology of multi-bit storage per cell. For example, a single polysilicon floating gate memory can use multiple threshold voltages to achieve multi-bit storage. Nitrided ROM uses charge trap technology to store two bits in two areas in the silicon nitride medium. The erasing of nitride memory requires hot hole injection, which will affect the reliability of the gate dielectric. As the size of microelectronic devices continues to shrink, the realization ...

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Problems solved by technology

The disadvantages of this method are as follows: firstly, the photolithography step is used to divide the floating gate, which is expensive and complicated; secondly, the control gate and the floating gate cannot be self-aligned, resulting in a capacitive coupling ratio of the control gate. reduce

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