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Method of making inverted trapezoidal cross-section structure by S18 series of positive photoresist

A positive photoresist, photoresist technology, applied in optics, opto-mechanical equipment, photo-engraving process of pattern surface, etc., can solve the problems of light leakage, resolution reduction, etc., to protect the environment, improve accuracy, freedom great effect

Active Publication Date: 2009-10-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0020] This method avoids the use of chlorobenzene, but in the case of a transparent medium (for example, polyimide or BCB) in the lower layer, it will produce a phenomenon similar to light leakage, which will have a great impact on the pattern formed by exposure and make the resolution reduce

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  • Method of making inverted trapezoidal cross-section structure by S18 series of positive photoresist
  • Method of making inverted trapezoidal cross-section structure by S18 series of positive photoresist
  • Method of making inverted trapezoidal cross-section structure by S18 series of positive photoresist

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Embodiment Construction

[0046] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0047] like figure 1 as shown, figure 1 A flow chart of a method for making an inverted trapezoidal cross-sectional structure provided by the present invention, the method includes the following steps:

[0048] Step 101: coating the photoresist of S18 series on the substrate;

[0049] Step 102: immersing the substrate with photoresist in a developing solution;

[0050] Step 103: baking at low temperature;

[0051] Step 104: exposure;

[0052] Step 105: baking at a higher temperature;

[0053] Step 106: developing.

[0054] The photoresist coated in step 101 above can be any photoresist of the S18 series, including photoresists of various types and thicknesses in this series, such as S1808, S1813, S1818, etc. The th...

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Abstract

The invention discloses a method of making an inverted trapezoidal cross-section structure by S18 series of positive photoresists. The method comprises the steps: A. coating S18 series of photoresists on a substrate; B. immersing the substrate with the photoresists into a developing solution; C. carrying out baking at low temperature; D. carrying out exposure; E. carrying out baking at higher temperature; and F. carrying out development. The invention provides the method of making an inverted trapezoidal cross-section structure by the S18 series of photoresists with simple processes through the treatment of the non-toxic and harmless solution, so that the photoetching precision and the controllability of inverted trapezoidal side edges are improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing technology of semiconductor devices and integrated circuits, in particular to a method for making an inverted trapezoidal cross-sectional structure by using S18 series positive photoresists. Background technique [0002] Metal evaporation and lift-off processes are widely used in the process of GaAs-based and InP-based compound semiconductor devices. These materials are sensitive to processing temperatures because lower temperatures are required in the process. In order to obtain metal lines with smooth edges, the photoresist needs to have an inverted trapezoidal profile. In this way, the metal evaporated in the vacuum chamber will not adhere to the sidewall of the inverted trapezoidal photoresist. During the stripping process, the photoresist on the sidewall is directly in contact with the stripping solution, making the stripping easy. [0003] In the Heterojunction Bipolar Transistor (HB...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F7/00
Inventor 金智
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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