Method for forming semiconductor interconnected structure

Abstract

The invention provides a method for forming a semiconductor interconnected structure, which comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate is provided with an inner metal layer which is provided with a dielectric layer; etching a through hole on the dielectric layer until the inner metal layer is exposed in the atmosphere of oxidation; processing the inner metal layer by a reduction plasma; and filling a conducting material in the through hole. By performing the in-situ reduction of the oxidized inner metal layer in the semiconductor metal interconnected structure, the method prevents the acid atmosphere of the subsequent process procedures from corroding the inner metal layer, improves the reliability of the manufactured semiconductor devices, reduces the time delay and improves the clock frequency.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for forming a semiconductor interconnection structure. Background technique [0002] A metal interconnect structure is a common structure included in semiconductor devices. This structure as figure 1 As shown, the surface of the semiconductor substrate 101 is covered with a dielectric layer 102, and the surface of the dielectric layer 102 forms an inner metal layer 103 with a pattern shape, and the dielectric layer 102 and the inner metal layer 103 are covered with an interlayer dielectric layer 104, and the interlayer dielectric layer 104 A groove for accommodating the outer metal layer 105 is opened thereon. [0003] The traditional semiconductor process mainly uses aluminum as the metal interconnect material, which has been limited in signal delay. Integrating the copper process into the integrated circuit manufacturing process can improve the integration le...

AI Technical Summary

Problems solved by technology

Since the etching gas used for plasma etching dielectric materials contains oxygen, an oxidizing atmosphere is formed. When the inner metal line is exposed to this oxidizing atmosphere, the metal line will partially form metal oxide, which will cause electron migration. And the reliability is reduced, the delay of the final semiconductor device is increased, and the clock frequency is reduced

Moreover, when the subsequent process is acidic conditions, metal oxides are more likely to be corroded than metals

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