Laser-stripping method

A technology of laser stripping and isolation area, which is applied in the direction of laser welding equipment, electrical components, circuits, etc., and can solve problems such as damage

Inactive Publication Date: 2009-12-09
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Problems solved by technology

[0008] Therefore, the main purpose of the present invention is to solve the problem of twice irradiating the bonded metal layer in the isolation channel, to so

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[0022] With regard to the detailed content and technical description of the present invention, examples are now used for further description, but it should be understood that these examples are for illustrative purposes only and should not be construed as limitations to the implementation of the present invention.

[0023] See Figure 5 The present invention is applied to the existing laser lift-off method. In the implementation of the laser lift-off method, an epitaxial layer 200 for luminescence is sequentially formed on a conversion substrate 100 (such as a sapphire substrate). Different from the known laser lift-off method, the present invention etches the epitaxial layer 200 to define an isolation channel 220 around each grain region 210, and there is no etched between two adjacent isolation channels 220, which is also An isolation region 230 of the epitaxial layer 200 material. Therefore, the spacing of the crystal grain region 210 is defined by two adjacent isolation channe...

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Abstract

The invention relates to a laser-stripping method. The method comprises the following steps: firstly, etching an epitaxial layer to define an insulation channel around a crystal grain region after the epitaxial layer is formed on a conversion basal plate and before a supporting basal plate with an adhesive metal layer is combined with the epitaxial layer; and arranging an insulation layer which is not etched between two adjacent insulation channels. Laser can only illuminate the insulation channels and the insulation layers around the crystal grain region by the insulation layers which are not etched every time, and the adhesive metal layer on the insulation channels can only be heated once; outward stress generated by the insulation layers and outward stress generated by the illuminated crystal grain region are mutually counteracted to lessen stress damage generated by the crystal grain region which is illuminated by the laser.

Description

technical field [0001] The invention relates to a laser lift-off method, in particular to a laser lift-off method for manufacturing an epitaxial layer structure of a light-emitting diode crystal grain. Background technique [0002] The main component of a light emitting diode (Light Emitting Diode, LED) is an LED grain, which is formed by multiple epitaxy of a light emitting semiconductor material. LED grains are mainly composed of semiconductor materials such as gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs), or gallium arsenide (GaAs), gallium nitride (GaN), and its internal structure is a PN junction with unidirectional Electricity. [0003] Taking the blue light-emitting diode as an example, it is generally made of sapphire (Al 2 o 3 ) substrate for growing higher-quality gallium nitride-based (GaN-based) epitaxial thin films. However, the poor electrical and thermal conductivity of the sapphire substrate restricts traditional blue LEDs to only use a lat...

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Application Information

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IPC IPC(8): H01L21/00H01L21/20H01L21/268H01L33/00B23K26/00B23K26/362
Inventor 张智松温伟值颜良吉
Owner HIGH POWER OPTO
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