Inspection apparatus by charged particle beam and method for manufacturing device using inspection apparatus
A technology of electron beam device and inspection device, applied in the field of device manufacturing
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Embodiment approach
[0219] 2-1) Conveyor system
[0220] 2-1-1) Box bracket
[0221] 2-1-2) Microenvironment device
[0222] 2-1-3) Main housing
[0223] 2-1-4) Loader housing
[0224] 2-1-5) Loader
[0225] 2-1-6) Workbench device
[0226] 2-1-7) Wafer clamping mechanism
[0227] 2-1-7-1) Basic structure of electrostatic chuck
[0228] 2-1-7-2) Clamping mechanism for 200 / 300 bridge tool
[0229] 2-1-7-3) Chip clamping process
[0230] 2-1-8) Device structure for 200 / 300 bridge tool
[0231] 2-2) Wafer transfer method
[0232] 2-3) Electron optical system
[0233] 2-3-1) Summary
[0234] 2-3-2) Details of structure
[0235] 2-3-2-1) Electron gun (electron beam source)
[0236] 2-3-2-2) Primary optical system
[0237] 2-3-2-3) Secondary optical system
[0238] 2-3-3) E×B unit (Wien filter)
[0239] 2-3-4) Detector
[0240] 2-3-5) Power supply
[0241] 2-4) Precharge unit
[0242] 2-5) Vacuum exhaust system
[0243] 2-6) Control system
[0244] 2-6-1) Structure and function
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Embodiment approach 1
[0470] This is an example of an inspection device mainly composed of a vacuum chamber, a vacuum exhaust system, a primary optical system, a secondary optical system, a detector, an image processor, and a control computer. Figure 26 An example thereof will be shown.
[0471] It has a primary optical system 26·1 for irradiating an electron beam onto a sample and a secondary optical system for guiding electrons emitted from the surface of the sample, such as secondary electrons, reflected electrons, backscattered electrons, etc., to a detector System 26·2. The secondary optical system is an image projection optical system. In order to separate the primary system and the secondary system, a so-called E×B beam splitter 26·3 is used. In addition, the electronic image signal detected by the detector 26·4 is converted into an optical signal or / and an electrical signal, and is processed by the image processor 26·5. In this case, even if the number of electrons incident on the detec...
Embodiment approach 2
[0521] In the same inspection device as Embodiment 1, when the detector adopts a TDI sensor / camera, if the number of pixels / series is between 2048 and 4096, and the number of taps is between 32 and 128, the sensitivity is 10000 to 40000DN / ( nJ / cm 2 ), higher speed and higher efficiency image acquisition can be performed. At this time, the line frequency can be 100-400kHz, and the video rate can be 10MHz-40MHz. At this time, when an 8-inch Si wafer, such as an LSI device wafer, has a resolution of 0.1 μm / pixel, the inspection time per wafer can be 1 / 8 to 2 hours.
[0522] At this time, when the resolution is 0.1 μm / pixel, in sample observation and defect inspection, when the pattern shape is, for example, L / S: 0.2 / 0.2 μm, a contrast ratio of 3 to 30% can be achieved, which is sufficient for image observation and defect detection. Defects in shapes other than L / S can also be detected if they are larger than 1 pixel size by comparing them using a change in ratio. The contrast...
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