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Silicon wafer with impurity capture zone and method for manufacturing same

A silicon wafer and area technology, which is applied in the field of manufacturing a silicon wafer, can solve problems such as unfavorable application of silicon wafer 14 and reduce the efficiency of solar cells, and achieve the effect of improving performance and saving costs.

Inactive Publication Date: 2010-02-17
KUNSHAN ZHONGCHEN SILICON CO LTD
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, there are still many impurities inside such silicon wafers 14, which will be unfavorable for the subsequent application of these silicon wafers 14.
For example, when the diffusion process is carried out in the process of manufacturing solar cells, if the concentration of metal impurities near the p-n junction on the surface of the silicon wafer 14 is too high, the performance of the solar cells will be reduced

Method used

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  • Silicon wafer with impurity capture zone and method for manufacturing same
  • Silicon wafer with impurity capture zone and method for manufacturing same
  • Silicon wafer with impurity capture zone and method for manufacturing same

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Embodiment Construction

[0018] see Figure 2A , Figure 2A A silicon wafer 2 according to a preferred embodiment of the invention is shown. In practical applications, the silicon wafer 2 can be a single crystal silicon wafer 2 or a polycrystalline silicon wafer 2 .

[0019] The silicon wafer 2 includes a silicon slice 20 and a first impurity trapping region 22 . The silicon slice 20 can be cut from a silicon ingot. The silicon slice 20 has a first surface 24 . The first impurity trapping region 22 is formed on the first surface 24 of the silicon slice 20 by a treatment applied to the first surface 24 of the silicon slice 20 .

[0020] The silicon slice 20 may also have a second surface 26 opposite the first surface 24 . In practical applications, the silicon wafer 2 may further include a second impurity trapping region 28 . The second impurity trapping region 28 can also be formed by applying the process on the second surface 26 of the silicon slice 20 .

[0021] In practical applications, the...

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Abstract

The invention discloses a silicon wafer with an impurity capture zone and a method for manufacturing same. The silicon wafer of the invention comprises a silicon slice and a first impurity capture zone. The silicon slice has a first surface. The first impurity capture zone is formed on the first surface of the silicon slice and is formed by processing the first surface of the silicon slice.

Description

technical field [0001] The present invention relates to a manufacturing method, in particular to a method of manufacturing a silicon wafer. Background technique [0002] It is well known that the performance of semiconductor devices is greatly affected by the concentration of impurities present in the semiconductor material. Taking a solar cell as an example, if the concentration of metal impurities near the surface of the solar cell substrate (for example, a silicon wafer) is too high, the performance of the solar cell itself will be affected. [0003] Solar cells are extremely competitive due to their simplicity and ease of mass production. In the silicon-based solar cell market, about 65% of the proportion belongs to polycrystalline silicon solar cells. The main reasons are as follows: (1) polycrystalline silicon materials have lower requirements on the purity of silicon raw materials than single crystal materials; (2) raw materials are easier to obtain; and ( 3) The cr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00C30B33/02H01L21/02
Inventor 徐文庆何思桦王荣宗许松林郭华皓
Owner KUNSHAN ZHONGCHEN SILICON CO LTD