Dislocation corrosion detecting method of single germanium wafer

Abstract

The invention discloses a dislocation corrosion detecting method of a single germanium wafer, comprising the following steps: putting a polished single germanium wafer into dislocation corrosion solution formed by mixing the water solution of hydrofluoric acid, nitric acid and copper nitrate to corrode, and detecting the dislocation density after the corrosion. In the invention, dislocation diction is carried out on the single germanium wafer, and can be used for directly detecting a cutting wafer, a grinding wafer and a polishing wafer of the single wafer cutting the wafers into wafers with dislocation <100> wafer direction of 6 degrees in a wafer direction, thereby reducing the lose of the single wafer and shortening working procedures. By adopting the method for the dislocation detection of the single germanium wafer, a product of the single germanium wafer in any working procedure can be detected by the dislocation, thereby the method avoids the condition that dislocation detectioncan be carried out only by cutting the single germanium wafer in a special mode in single wafer detection, ensures that the dislocation detection of the single germanium wafer can be carried out at any moment and is beneficial to executing quality control.

Description

technical field [0001] The invention relates to the technical field of defect corrosion detection, in particular to a germanium single wafer dislocation corrosion detection method. Background technique [0002] Germanium solar cells are widely used in aerospace fields such as artificial satellites, spacecraft, and space stations. Compared with traditional silicon solar cells, single-junction and multi-junction compound solar cells made of epitaxial GaAs / InGaP on germanium single crystal substrates have High conversion efficiency, high temperature resistance, radiation resistance, strong reliability and other advantages, so it has been more and more widely used. [0003] Germanium single wafer is the substrate material of solar cells, and the defects of the substrate material directly affect the quality of the epitaxial layer on its surface. From the perspective of reliability requirements, it is hoped that the substrate material is a perfect single wafer without any defects....

AI Technical Summary

Problems solved by technology

[0004] The invention provides a method for detecting dislocation corrosion of a germanium single wafer, which is used to solve the problems existing in the prior art that the single crystal crystal orientation needs to be cut into a wafer within 6° of the crystal orientation for detection, and the detection can only be performed on a single crystal wafer. Dislocation detection can only be done by cutting in a special way during crystal inspection

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