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Method for chemical mechanical polishing

A chemical mechanical and grinding layer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting device performance, extreme excessive grinding, etc., to avoid device performance, avoid excessive grinding, and achieve selective grinding Effect

Active Publication Date: 2010-02-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method of chemical mechanical grinding, which solves the problem of extremely excessive grinding that may occur in the existing technology, thereby affecting the performance of the device

Method used

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Embodiment approach

[0013] refer to figure 1 Shown, a kind of embodiment of the method for chemical mechanical polishing of the present invention comprises:

[0014] Step s1, providing a grinding layer;

[0015] Step s2, forming a grinding protective layer on the grinding layer on the area that does not need grinding;

[0016] Step s3, selecting a slurry whose grinding rate for the grinding layer is greater than the grinding rate for the grinding protective layer, and performing chemical mechanical grinding on the grinding layer;

[0017] Step s4, removing the grinding protection layer.

[0018] In a specific embodiment, the grinding layer can be the excess polysilicon layer that needs to be removed during the process of forming the erasing gate and the device gate in the memory process, or it can be the local thickness adjustment or surface smoothing that needs to be performed in other processes Adjusted material layers.

[0019] However, before chemical mechanical polishing, the grinding pr...

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Abstract

The invention relates to a method for chemical mechanical polishing, which comprises the following steps: forming a polishing protective layer in an area without needing to be polished on a polishinglayer; and selecting a polishing paddle which has a higher polishing speed on the polishing layer than the polishing speed on the polishing protective layer to perform chemical mechanical polishing ofthe polishing layer. The method for the chemical mechanical polishing avoids the over-polishing on the area without needing to be polished, thereby preventing a polishing process from influencing thedevice performance.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] With the development of semiconductor manufacturing technology, the size of the memory is gradually reduced, however, the voltage for programming and erasing the memory is not reduced to the same extent. Therefore, reducing the programming and erasing voltage becomes one of the main challenges for the further scaling of flash memory. [0003] At present, a common solution is to use an additional erasing gate in the storage unit of the memory, and reduce the erasing voltage by increasing the coupling with the floating gate. For example, Chinese patent application No. 200580019839.9 discloses a nonvolatile memory device, comprising: a substrate with a substrate surface; at least two isolation regions in the substrate surface, the isolation regions have a floating gate extending over the substrate betw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304
Inventor 蒋莉邵颖黎铭琦
Owner SEMICON MFG INT (SHANGHAI) CORP
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