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Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same

A resist and composition technology, applied in the field of semiconductor device production, can solve problems such as undeveloped, few material components, and stripes on the surface of the resist film

Inactive Publication Date: 2010-03-10
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, a large amount of fluorine atoms added to the resist film tends to cause phase separation, resulting in streaks on the resist film surface, whereby pattern deterioration and defects may occur
[0011] A cage-type silicon compound containing a poor alkali solubility has been used for liquid immersion exposure (see Japanese Laid-Open Patent No.: 2006-309245), however, even this resist composition may cause defects in the final pattern
[0012] Therefore, a material suitable for liquid immersion exposure and a technology using the material have not been developed so far, which can prevent contamination of the interior of optical elements and exposure devices, have a high contact angle for liquid immersion media, and allow finer patterns. The production process does not reduce the output, and at the same time, few material components are leached into the liquid immersion medium

Method used

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  • Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same
  • Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same
  • Resist composition for immersion exposure and method for manufacturing a semiconductor device using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0165] Preparation of liquid immersion exposure resist composition

[0166] Base resins (acrylic resins) (a) to (c) are represented by structural formulas (7) to (9), silicon-containing side chain resins 1 to 4 are represented by structural formulas 3 to 6 in Synthesis 1 to 4, and the above two resins Use as indicated in Table 1. Then, with respect to 100 parts by weight of the base resin, 3 parts by weight of triphenylsulfonium nonafluorobutanesulfonate (triphenylsulfonium nonafluorobutanesulfonate) (manufactured by Midori Kagaku Co.) as an acid generator, and 900 parts by weight of propylene glycol monomethyl Ether acetate (PGMEA) was used as a solvent, thereby preparing immersion exposure resist compositions A to R.

[0167] Base resin (a) (weight average molecular weight (Mw) = 15,600)

[0168]

[0169] Structural formula (7)

[0170] Base resin (b) (weight average molecular weight (Mw) = 9,600)

[0171]

[0172] Structural formula (8)

[0173] Base resin (c) (w...

Embodiment 2

[0180] Assess hydrophobicity

[0181] The immersion exposure resist compositions A to R shown in Table 1 were applied by a spin coating method at 1,500 rpm for 20 seconds to a surface coated with an antireflective film (ARC-39 manufactured by Nissan Chemical Industries Plant). on the substrate. The substrate was baked on a hot plate at a temperature of 110° C. for 60 seconds, and then a resist film with a thickness of 250 nm was formed. The static contact angle and receding contact angle (dynamic contact angle) of pure water and each resist film were measured and compared.

[0182] The static contact angle was measured by a contact angle meter (CA-W 150, manufactured by Kyowa Interface Science Co., Ltd.) at an ejection time of 40 ms.

[0183] For the measurement of the receding contact angle, the substrate with the resist film is fixed on an inclined platform whose angle can be continuously changed by self-made equipment, and then a drop of pure water (50 μl) is dropped on t...

Embodiment 3

[0189] Evaluation of corrosion resistance

[0190] The liquid immersion exposure resist compositions K to M, D, H, I, and J shown in Table 1 were all applied by the spin coating method at 1,500 rpm for 20 seconds onto a surface using an antireflection film (manufactured by Nissan Chemical Industries factory). fabricated on ARC-39) coated substrates. The substrate was baked on a hot plate at a temperature of 110° C. for 60 seconds, and then a resist film with a thickness of 250 nm was formed.

[0191] Next, the space between the resist film and the optical elements of the liquid immersion exposure apparatus was filled with water, and then, the resist film was exposed to ArF excimer laser light (wavelength: 193 nm).

[0192] The obtained resist film was developed using a 2.38 wt % TMAH aqueous solution to remove the irradiated regions of the resist film. Thus, a 200 nm line / space pattern was developed with exposure amounts as shown in Table 3.

[0193] table 3

[0194] ...

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Abstract

According to an aspect of an embodiment, a resist composition for immersion exposure includes a matrix resin so that the matrix resin is turned alkali-soluble by an acid. The resist composition further includes a resin having a side chain containing silicon, the resin being capable of being turned alkali-soluble by an acid, the content of the silicon with respect to the total amount of the matrixresin and the resin being 1% by mass or less.

Description

technical field [0001] The present invention relates to a kind of resist composition for resist pattern, and this resist pattern is formed in the semiconductor device production process that adopts liquid immersion exposure technology, and above-mentioned technology is by filling medium (liquid ), the medium has a refractive index n higher than 1 (refractive index of air) and can provide higher resolution at the same time. The present invention also relates to a method of producing a semiconductor device using the resist composition. Background technique [0002] As the packaging density of semiconductor integrated circuits gradually increases, the size of the smallest pattern is miniaturized to 100 nm or less. For example, in order to form a fine pattern, a resist film is formed on the surface of a workpiece substrate having a thin film, then subjected to selective exposure, and then developed, thereby forming a resist pattern. By using this resist pattern as a mask, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/075G03F7/004G03F7/00H01L21/027
CPCG03F7/0045G03F7/0758G03F7/2041G03F7/075
Inventor 野崎耕司小泽美和
Owner FUJITSU LTD