Liquid crystal display device and manufacturing method thereof
A technology of a liquid crystal display device and a manufacturing method, which is applied in the direction of photolithography, optics, and optomechanical equipment on a pattern surface, and can solve problems such as affecting the display effect, reducing display quality, and wiping defects, so as to prevent wiping defects and Effects of suppressing black defects, improving display effect, and preventing wiping defects
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no. 1 approach
[0039] Figure 10 yes Figure 4 An enlarged view of the partial structure of the region D in the liquid crystal display device. Please refer to Figure 10 , the partially enlarged view includes the following elements: a first substrate 11 and a second substrate 21 , and the two substrates 11 and 21 are arranged opposite to each other. A first spacer 31 is provided on the first substrate 11 . A protrusion is disposed on the second substrate 21 , and the protrusion includes an upper stacking layer 51 and a lower stacking layer 41 . The upper stacking layer 51 is stacked on the lower stacking layer 41 . In one embodiment, the lower stack layer 41 is a semiconductor material, and the upper stack 51 is a metal material, wherein the semiconductor material can be silicon oxide or silicon nitride, and can also be other semiconductor materials, and the metal The material may be aluminum (Al), molybdenum (Mo) or an alloy of aluminum or molybdenum, and of course other metal material...
no. 2 approach
[0046] Figure 11 yes Figure 4 An enlarged view of the local structure of another embodiment of the region D in the liquid crystal display device. Please refer to Figure 11 , the partially enlarged view includes the following elements: a first substrate 11 and a second substrate 21 , and the two substrates 11 and 12 are arranged opposite to each other. A first spacer 31 is provided on the first substrate 11 . A protrusion including an upper stack layer 51 and a lower stack layer 41 is disposed on the second substrate 21 , and the upper stack layer 51 completely covers the lower stack layer 41 . The material of the lower stack layer 41 is a semiconductor material, and the material of the upper stack 51 is a metal material. Similarly, the semiconductor material in this embodiment can be silicon oxide or silicon nitride, and of course other semiconductor materials, and the metal material can be aluminum (Al), molybdenum (Mo) or an alloy of aluminum, molybdenum Alloys, of c...
no. 3 approach
[0051] Figure 12 yes Figure 4 An enlarged view of the local structure of another embodiment of the region D in the liquid crystal display device. Please refer to Figure 12 , the first substrate 11 and the second substrate 21 are disposed opposite to each other. A first spacer 31 is provided on the first substrate 11 . A protrusion including the upper stacking layer 51 and the lower stacking layer 41 is disposed on the second substrate 21 , and the upper stacking layer 51 completely covers the lower stacking layer 41 . The materials of the lower stacking layer 41 and the upper stacking layer 51 can refer to the foregoing embodiments, and will not be repeated here.
[0052] The upper stacking layer 51 includes an upper surface 51a and a lower surface 51b, and the lower surface 51b completely covers the lower stacking layer 41, wherein the upper surface 51a is arc-shaped. In this embodiment, the arc shape is similar to the arc portion of a semicircle, and may also be an a...
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