Liquid crystal display device and manufacturing method thereof
A technology of a liquid crystal display device and a manufacturing method, which is applied in the direction of photolithography, optics, and optomechanical equipment on a pattern surface, and can solve problems such as affecting the display effect, reducing display quality, and wiping defects, so as to prevent wiping defects and Effects of suppressing black defects, improving display effect, and preventing wiping defects
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[0038] The first embodiment
[0039] Picture 10 Yes Figure 4 An enlarged view of the partial structure of the region D in the liquid crystal display device. Please refer to Picture 10 , The partially enlarged view includes the following elements: a first substrate 11 and a second substrate 21, and the two substrates 11 and 21 are arranged oppositely. A first spacer 31 is provided on the first substrate 11. A protrusion is provided on the second substrate 21, and the protrusion includes an upper stacked layer 51 and a lower stacked layer 41. The upper stacked layer 51 is stacked on the lower stacked layer 41. In one embodiment, the lower stack 41 is a semiconductor material, and the upper stack 51 is a metal material. The semiconductor material can be silicon oxide or silicon nitride, and of course, it can also be other semiconductor materials. The material can be aluminum (Al), molybdenum (Mo) or an alloy of aluminum or an alloy of molybdenum, and of course it can also be o...
Example
[0045] Second embodiment
[0046] Picture 11 Yes Figure 4 An enlarged view of a partial structure of another embodiment of the region D in the liquid crystal display device. Please refer to Picture 11 , The partially enlarged view includes the following elements: a first substrate 11 and a second substrate 21, and the two substrates 11, 12 are arranged oppositely. A first spacer 31 is provided on the first substrate 11. A protrusion including an upper stack layer 51 and a lower stack layer 41 is provided on the second substrate 21, and the upper stack layer 51 completely covers the lower stack layer 41. The material of the lower stack 41 is a semiconductor material, and the material of the upper stack 51 is a metal material. Similarly, the semiconductor material of this embodiment can be silicon oxide or silicon nitride, of course, it can also be other semiconductor materials, and the metal material can be aluminum (Al), molybdenum (Mo) or an alloy of aluminum or molybdenum....
Example
[0050] The third embodiment
[0051] Picture 12 Yes Figure 4 An enlarged view of a partial structure of another embodiment of the region D in the liquid crystal display device. Please refer to Picture 12 , The first substrate 11 and the second substrate 21 are opposed to each other. A first spacer 31 is provided on the first substrate 11. A protrusion including an upper stack layer 51 and a lower stack layer 41 is provided on the second substrate 21, and the upper stack layer 51 completely covers the lower stack layer 41. The materials of the lower stack layer 41 and the upper stack layer 51 can refer to the foregoing embodiments, and will not be repeated here.
[0052] The upper stacked layer 51 includes an upper surface 51a and a lower surface 51b, and the lower surface 51b completely covers the lower stacked layer 41, wherein the upper surface 51a has an arc shape. In this embodiment, the arc shape is similar to a semicircular arc part, and may also be a semi-elliptical ar...
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