Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor
A heterojunction bipolar and transistor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as potential barriers caused by the diffusion of boron elements
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[0011] The method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that the drawings are all in a very simplified form and use imprecise ratios, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0012] The core idea of the present invention is to provide a method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor, which can prevent the occurrence of potential barriers and ensure the stability of product performance.
[0013] Please refer to figure 1 as shown, figure 1 It is a schematic diagram of the process flow of th...
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