11 results about "Boron difluoride" patented technology

The invention discloses an ion implantation process of an image sensor. The ion implantation process comprises the following steps: providing an ion implantation machine; the ion implantation machine continuously runs the nth ion implantation process for the first time, and n is a positive integer; based on the nth ion implantation process of the first time, the ion implantation machine automatically cuts a source, and continuously operates the (n + 1) th ion implantation process of the second time; the nth ion implantation process and the (n + 1) th ion implantation process are independently selected from any one of a P-type ion implantation process, an N-type ion implantation process and a D-type ion implantation process; the nth ion implantation process is different from the (n + 1) th ion implantation process; an ion beam in the P-type ion implantation process comprises boron difluoride and / or boron, an ion beam in the N-type ion implantation process comprises arsenic and / or phosphorus, and an ion beam in the D-type ion implantation process comprises indium. Through the process, the production efficiency of the image sensor and the low-brightness white dot performance are improved.

The invention discloses a fluorescent probe as well as a preparation method and application thereof. The invention provides a series of fluorescent probes with novel structures, and the fluorescent probes take 2-(isoquinoline-1-yl) pyrrole boron difluoride as fluorophores, so that the fluorescence quantum yield of the probes is improved, the detection resolution of nitric oxide is increased, and the detection sensitivity is improved. The fluorescent probe disclosed by the invention has the characteristics of large Stokes displacement, high fluorescence quantum yield, good selectivity and short response time.

The application discloses a preparation method and application of a hydrophilic porous organic polymer based on fluoroborondipyrrin, and belongs to the technical field of photocatalytic materials. The application designs and prepares a hydrophilic porous organic polymer based on fluoroborondipyrrin by using a Friedel-Crafts reaction for cross-linking and modification after a sulfonation reaction, and modifies the hydrophilic porous organic polymer based on fluoroborondipyrrin by using a sulfonation modification strategy. The porous organic polymer after sulfonation has excellent hydrophilicity and photocatalytic performance, and can efficiently degrade organic pollutants in water. The application provides a high-performance porous organic polymer photocatalyst for degrading organic pollutants in wastewater, and provides a simple and feasible new method and new idea for design and development, performance improvement and practical application of photocatalysts.

This invention discloses a boron difluoride complex containing non-alternating conjugated ligands, its preparation method, and its applications. The boron difluoride complex is a compound of formula (I) or a salt thereof; wherein R is C 1～4 Alkyl, halogen, cyano, pinacol borate ester, formaldehyde, nitro, phenyl, C 1～4 Alkoxycarbonyl, C 1～4 Alkyloxy, C 1～3 One or more alkoxy groups. The fluorescent dye has a simple synthesis process, mild reaction conditions, low synthesis cost, high yield, and low toxicity, making it suitable for large-scale industrial production.

The present application provides a method for manufacturing a semiconductor device. The method comprises: providing a substrate and performing an ion implantation process; performing a surface treatment on the implanted substrate to remove free fluorine ions on the surface; and depositing a first dielectric layer on the treated substrate. Preferably, the ion implantation uses boron difluoride and the surface treatment uses hydrogen treatment. The present application effectively removes fluorine ions remaining on the surface of the polysilicon resistor due to high dose implantation by adding a surface treatment step before depositing the dielectric layer, thereby blocking the generation of subsequent silicon tetrafluoride gas and inhibiting film peeling defects generated in the manufacture of low resistance polysilicon resistors. The method eliminates the risk of "bump", avoids resistance value drift and machine contamination, significantly increases the process window, and improves product yield.

The invention discloses a water-soluble tetrasulfonic aza boron fluoride dipyrrole near-infrared fluorescent dye as well as a preparation method and application thereof. The fluorescent dye has the following structure: R is selected from-(CH2) nSO3-, and n is an integer greater than or equal to 2 and less than or equal to 6. The water solubility is remarkably improved through tetrasulfonic acid group modification, the fluorescent probe shows high fluorescent brightness in a water solution, the maximum emission wavelength is about 725 nm, the fluorescent probe is located in a biological tissue optical window, and high-contrast imaging of deep tissue is facilitated. Compared with clinical indocyanine green (ICG), the water solubility, the fluorescence quantum yield and the light stability are remarkably improved, the molar extinction coefficient is high, and the photobleaching rate is low; the synthesis route is simple, the repeatability is good, the product is easy to purify, and the biocompatibility is good. The dye is applicable to real-time navigation, tumor imaging and blood vessel visualization in fluorescence-guided surgery, and shows excellent clinical application potential and industrialization prospect.

The invention discloses a red light emitting material based on a pyridine imine boron difluoride receptor as well as a preparation method and application of the red light emitting material, and belongs to the field of organic photoelectric materials. The red light emitting material based on the pyridine imine boron difluoride acceptor has a structure as shown in a formula I, a nitrogen-containing heterocyclic ring is taken as an electron donor, pyridine imine boron difluoride is taken as an electron acceptor, a D-A-D structure with strong electron donating and electron withdrawing groups is formed, a large space conjugated system is formed, narrow-band system dark red light emission is realized, and the red light emitting efficiency is improved. A non-radiative transition path is reduced, and the luminous efficiency of the material is improved. The compound has proper HOMO energy level and LUMO energy level by regulating and controlling the electron cloud distribution of a molecular front track, is beneficial to matching with each functional layer of a device, reduces the working voltage of the device, and improves the luminous efficiency of the device. Due to the existence of boron difluoride, the conformation of the material is diversified, and under the stimulation of external mechanical force, the material can generate the change of luminescence displacement, so that the material can be applied to an information encryption device.

The application discloses a kind of porous organic polymers based on porphyrin-boron difluoride and preparation method and photocatalytic application, belong to photocatalytic material technical field.The Sonogashira coupling reaction is used to connect fluorine boron difluoride derivative through alkynyl and porphyrin, and a kind of porous organic polymer BPOP of porphyrin-boron difluoride is prepared.The polymer is under light, and adsorbs and photodegrades phenolic, methyl orange and other organic pollutants, to high selectivity and fastly photocatalytic oxidation methyl phenyl sulfoxide from benzyl sulfide, and excellent photocatalytic performance is exhibited.

The invention relates to the technical field of organic materials, and particularly discloses an organic compound with an aggregation-induced emission effect and a preparation method and application thereof. The novel boron difluoride compound with the aggregation-induced emission characteristic is synthesized, when the novel boron difluoride compound is used as a latent fingerprint developing agent, all three levels of fingerprint feature details can be shown through the hydrophobic interaction between the compound and oleic acid secreted by sweat, and therefore the latent fingerprint developing agent can be used for developing the latent fingerprint developing agent. The stability, old fingerprint extraction capability and hydrophobicity of the compounds lay a foundation for potential application of the compounds in the fields of forensic chemistry and criminal investigation, and the problem that in the prior art, an imaging mechanism between the boron difluoride compound and the LFPs is not clear is effectively solved.

The invention belongs to the technical field of medicine, and relates to a pH response type nano fluorescent compound and a preparation method and application thereof.The method comprises the following steps that a curcumin-boron difluoride complex and emodin are weighed and dissolved in a mixed solution of tetrahydrofuran and ethyl alcohol, a reaction is conducted for 0.5-1.5 h at the temperature of 45-55 DEG C, then 1, 3-butanediol is added, and the pH response type nano fluorescent compound is obtained. And adding 2, 2-dipalmitoyl-sn-glycerol-3-phosphoethanolamine, and reacting at 45-55 DEG C for 0.5-1.5 hours, so as to obtain the pH response type nano fluorescent compound. The nano fluorescent compound has good dispersibility, good biocompatibility and high bioavailability, has different release rates under different pH values, and can realize real-time on-demand release; furthermore, the compound has a fluorescence characteristic, has an obvious inhibition effect on HCT-116 cells (human colorectal cancer cells), and has high affinity with HCT-116 cells; therefore, drug release can be tracked in real time in combination with fluorescence imaging.

The application discloses an IEGT device with enhanced anti-latch-up performance and a manufacturing method thereof, and solves the problem that the IEGT device is prone to latch-up under high temperature and large current in the prior art. The technical scheme is as follows: a P-type dummy region of the IEGT is formed on a zone-fusion single crystal silicon substrate sheet, groove trenches are etched on both sides, a sacrifice oxide layer is thermally grown, the sacrifice oxide layer is peeled off, a gate oxide layer is grown again, polycrystalline silicon is deposited in the groove trenches, a trench gate of the IEGT is formed, a PBody region and an emission region are formed by ion implantation on the front surface in sequence, a contact hole is etched, boron and boron difluoride are ion implanted on the front surface to form an ohmic contact area of the contact hole and deposit metal, a field stop FS layer and a collector region are formed by ion implantation on the back surface, and the back surface is sputtered with metal. The layout structure of the emitter N+ of the IEGT device is changed, the emitter resistance of the NPN transistor is increased, the current gain of the NPN transistor is reduced, and the anti-latch-up performance of the IEGT device is improved.