PMOS source and drain region ion implantation method and PMOS device manufacturing method

Abstract

The invention provides a PMOS source and drain region ion implantation method and a PMOS device manufacturing method. The PMOS source and drain region ion implantation method comprises the steps that a substrate is provided, wherein a grid electrode structure is formed on the surface of the substrate, and side walls are formed on the two sides of the grid electrode structure; with the side walls serving as masks, PMOS source and drain region ion implantation is performed on the two sides of the grid electrode structure so that ions can be implanted into the substrate, wherein the implanted ions contain fluorine and boron difluoride, and the implantation of the fluorine and the boron difluoride is performed in the environment at the temperature ranging from -100 DEG C to -50 DEG C. The implantation of the fluorine and the boron difluoride is performed in the environment at the temperature ranging from -100 DEG C to -50 DEG C, and the environment at the temperature ranging from -100 DEG C to -50 DEG C can inhibit the temperature rise effect of silicon wafers during implantation of the fluorine and the boron difluoride; accordingly, the escape speed of the fluorine element can be lowered, and corrosion of photoresist is inhibited.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a PMOS source-drain region ion implantation method and a PMOS device manufacturing method. Background technique [0002] In the semiconductor manufacturing process, when implanting donor / acceptor elements, non-donor / acceptor elements are often used for co-implantation to achieve the required auxiliary effect. [0003] The most common auxiliary implant elements are germanium, silicon, carbon, fluorine, nitrogen and so on. The roles of various elements vary, for example, germanium and silicon are mainly used for pre-amorphization, carbon is mainly used for inhibiting diffusion, and fluorine is mainly used for improving negative bias temperature instability (NBTI) and suppressing short channel effects (SCE). [0004] When implanting the source and drain regions of PMOS, boron difluoride (BF2) and fluorine (F) are often used for co-implantation, because the introduction o...

AI Technical Summary

Problems solved by technology

After the second step of fluorine injection, the product is scanned for surface defects, and it is often found that there are bubbles on the photoresist (such as image 3 As shown), that is, the phenomenon of photoresist corrosion occurs, which leads to a decrease in the reliability of the formed PMOS

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