Supercharge Your Innovation With Domain-Expert AI Agents!

Pretreatment method for ion implanter

An ion implanter and pretreatment technology, used in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve problems such as affecting beam purity and interfering with ion beams, achieve high cleaning and source exchange efficiency, and ensure uniformity performance, shortening the preprocessing time

Active Publication Date: 2015-03-25
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF12 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it does not solve the problem that when the target ion source is implanted, the deposit will volatilize under the condition of heating to interfere with the ion beam, thus affecting the purity of the beam

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pretreatment method for ion implanter
  • Pretreatment method for ion implanter
  • Pretreatment method for ion implanter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0025] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0027] A pretreatment method for an ion implanter, comprising two pretreatment stages;

[0028] In the first pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a pretreatment method for an ion implanter. The method includes two pretreatment stages, in the first pretreatment stage, pretreatment gas flows into an ion source reaction chamber of the ion implanter, and the ion source reaction chamber is cleaned; in the second pretreatment stage, ion source energy is adjusted to 50 keV, and the terminal voltage is adjusted to 10 kV, so that preset beams are generated, emitted along a beam channel of the ion implanter and used for cleaning the ion implanter. According to the method, boron difluoride is adopted for replacing Ar gas and serves as the pretreatment gas for cleaning treatment, pretreatment time is shortened, a production period is shortened, cleaning efficiency and source change efficiency are improved, uniformity of ion beams is guaranteed, and cleaning efficiency is as high as 80% to 95%.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a pretreatment method capable of improving the production cycle of an ion implanter. Background technique [0002] With the development of semiconductor manufacturing technology, wafer manufacturing plants are also gradually expanding their production capacity. Implantation technology is a very important part of the semiconductor process flow, especially the ion implantation steps involved in the front stage of integration are quite a lot, so the efficiency of ion implantation The contribution to the capacity of the manufacturing plant is particularly critical. [0003] There are many types of ion implantation, and it is usually required that the machine can switch between different sources. Therefore, one or more steps of pretreatment are required before changing the source, and argon gas (Ar) is introduced to purge the ion source reaction chamber (source chamber); and then the io...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/317H01J37/3171H01L21/265
Inventor 余德钦邱裕明肖天金
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com