Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor

A heterojunction bipolar and transistor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as potential barriers caused by the diffusion of boron elements

Active Publication Date: 2010-05-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor, so as to solve the problem of potential barrier caused by the diffusion of boron element doped in the base region in the existing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor
  • Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor
  • Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The method for suppressing boron element diffusion in the base region of the heterojunction bipolar transistor proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be It should be clearer. It should be noted that the drawings are all in a very simplified form and use imprecise ratios, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0012] The core idea of ​​the present invention is to provide a method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor, which can prevent the occurrence of potential barriers and ensure the stability of product performance.

[0013] Please refer to figure 1 as shown, figure 1 It is a schematic diagram of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for inhibiting boron diffusion in a base region of a heterojunction bipolar transistor, which comprises the step that when a buffer silicon layer, a germanium-silicon layer and a monocrystal silicon layer of the base region are grown on a silicon substrate, ion injection of a boron difluoride element into the germanium-silicon layer instead of in-situ doping of a boron element of impurity elements on the germanium-silicon layer is performed after the buffer silicon layer, the germanium-silicon layer and the monocrystal silicon layer of the base region are grown completely. The method is simple and easy to operate and can prevent potential barrier from occurring and ensure that the performance of products is stable.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for suppressing the diffusion of boron in the base region of a heterojunction bipolar transistor. Background technique [0002] In the field of integrated circuit manufacturing, heterojunction bipolar transistors have a wide range of applications. Compared with general bipolar junction transistors, heterojunction bipolar transistors change the emitter region to a semiconductor material with a wide bandgap, that is, homogeneous The emitter junction is replaced by a heterojunction, which has the advantage that the injection efficiency of the emitter junction is basically independent of the doping concentration on both sides of the emitter junction, so that the doping concentration of the base region can be made very high, which can be achieved in The premise of ensuring a large amplification factor is to increase the frequency, so that it can enter the milli...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/265
Inventor 孙涛陈乐乐曼纽拉·奈耶尔
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com