Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor

A heterojunction bipolar and transistor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as potential barriers caused by the diffusion of boron elements

Active Publication Date: 2010-05-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0003] The invention provides a method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor, so as to solve the problem of potential barrier caused by the diffusion of boron element doped in the base region in the existing process

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  • Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor
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  • Method for inhibiting boron diffusion in base region of heterojunction bipolar transistor

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Embodiment Construction

[0011] The method for suppressing boron element diffusion in the base region of the heterojunction bipolar transistor proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be It should be clearer. It should be noted that the drawings are all in a very simplified form and use imprecise ratios, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0012] The core idea of ​​the present invention is to provide a method for suppressing the diffusion of boron element in the base region of the heterojunction bipolar transistor, which can prevent the occurrence of potential barriers and ensure the stability of product performance.

[0013] Please refer to figure 1 as shown, figure 1 It is a schematic diagram of the...

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Abstract

The invention relates to a method for inhibiting boron diffusion in a base region of a heterojunction bipolar transistor, which comprises the step that when a buffer silicon layer, a germanium-silicon layer and a monocrystal silicon layer of the base region are grown on a silicon substrate, ion injection of a boron difluoride element into the germanium-silicon layer instead of in-situ doping of a boron element of impurity elements on the germanium-silicon layer is performed after the buffer silicon layer, the germanium-silicon layer and the monocrystal silicon layer of the base region are grown completely. The method is simple and easy to operate and can prevent potential barrier from occurring and ensure that the performance of products is stable.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for suppressing the diffusion of boron in the base region of a heterojunction bipolar transistor. Background technique [0002] In the field of integrated circuit manufacturing, heterojunction bipolar transistors have a wide range of applications. Compared with general bipolar junction transistors, heterojunction bipolar transistors change the emitter region to a semiconductor material with a wide bandgap, that is, homogeneous The emitter junction is replaced by a heterojunction, which has the advantage that the injection efficiency of the emitter junction is basically independent of the doping concentration on both sides of the emitter junction, so that the doping concentration of the base region can be made very high, which can be achieved in The premise of ensuring a large amplification factor is to increase the frequency, so that it can enter the milli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/265
Inventor 孙涛陈乐乐曼纽拉·奈耶尔
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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