Soilless culture method of poinsettia

A soilless cultivation and first-class technology, applied in the field of flower cultivation, can solve the problems of unfavorable flower growth, salt accumulation, resource waste, etc., and achieve the effects of fast growth, reduced water and fertilizer consumption, and strong growth

Inactive Publication Date: 2010-06-02
BEIJING FORESTRY UNIVERSITY
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The control of the amount of watering and fertilization is mostly based on experience. Improper watering and excessive fertilization can easily ca...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation of embodiment 1 cultivation medium of the present invention

[0025] Take 3m each of corn stalk powder and sawdust 3 , according to 5kg / m 3 Add urea, cover and seal with black plastic cloth respectively, and carry out anaerobic fermentation for 6 months. After fermentation, take 10L of 40% formaldehyde solution and sprinkle it on the fermented product for disinfection, cover it with black plastic cloth, uncover the cover after 1 week and turn it in the sun for 10 days; take 1m of perlite 3 , fully rinsed with water until no obvious perlite powder flows out with the water flow; mix corn stalk powder: sawdust: perlite according to the volume ratio of 2:1:1, and prepare 2m 3 Soilless cultivation substrate.

Embodiment 2

[0026] Embodiment 2 Application of the inventive method in poinsettia soilless cultivation

[0027] Under the greenhouse condition with full-automatic temperature control and ventilation facilities, the substrate cultivation poinsettia 'velvet' in Example 1 was adopted.

[0028] (1) Poinsettia 'Velvet' is cultivated for 31-53 days after being potted. The watering frequency is when the water content of the substrate drops to 65.09%. The amount of fertilizer applied is 397.34mg·1000ml substrate -1 ;

[0029] (2) The watering frequency for 54 to 58 days of cultivation is that the moisture content of the substrate drops to 66.83% watering, and the amount of fertilizer applied is 397.34mg·1000ml substrate -1 ;

[0030] (3) The watering frequency for 59 to 93 days of cultivation is that the water content of the substrate drops to 66.83%, and the amount of fertilizer applied is 413.58mg·1000ml substrate -1 ;

[0031] (4) The watering frequency of 94~107 days of cultivation is tha...

Embodiment 3

[0034] Embodiment 3 Application of the inventive method in poinsettia soilless cultivation

[0035] Under the greenhouse condition with full-automatic temperature control and ventilation facilities, the substrate cultivation poinsettia 'velvet' in Example 1 was adopted.

[0036] (1) Poinsettia 'Velvet' is cultivated for 31 to 53 days after being potted. The watering frequency is when the water content of the substrate drops to 65.09%, and the amount of fertilizer applied is 400mg·1000ml substrate -1 ;

[0037] (2) The watering frequency for 54 to 58 days of cultivation is that the water content of the substrate drops to 66.83% watering, and the fertilization rate is 400mg·1000ml substrate -1 ;

[0038] (3) The watering frequency for 59 to 93 days of cultivation is that the moisture content of the substrate drops to 66.83% watering, and the fertilization rate is 414mg·1000ml substrate -1 ;

[0039] (4) The watering frequency of 94~107 days of cultivation is that the water c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a soilless culture method of poinsettia, which performs scientific and reasonable soilless culture of the poinsettia according to the growth and development characteristics of the poinsettia and different needs for water and nutrients at different stages of development. The method is used for soilless culture of the poinsettia and has advantages of quick plant growth, strong plants, long florescence, small water and fertilizer consumption and low production cost compared with the traditional culture method.

Description

technical field [0001] The invention belongs to the technical field of flower cultivation, and in particular relates to a method for soilless cultivation of poinsettias. Background technique [0002] Poinsettia (Euphorbia pulcherrima) is a perennial erect shrub of Euphorbiaceae Euphorbiaceae, often cultivated as an annual. Its bracts are large and bright, and it has a long viewing period. The flowering period coincides with Christmas, New Year's Day, and Spring Festival. It is a beautiful indoor potted flower in winter and has always occupied an important share in the sales of potted flowers in countries all over the world. [0003] In the commercial soilless cultivation of poinsettias, peat is the main cultivation substrate. Peat is a short-term non-renewable resource, and the cost of peat substrate is relatively high. In order to protect the environment and reduce production costs, it is necessary to conduct research on peat substitute substrates. At present, some progres...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): A01G31/00C05G1/00
CPCY02P60/21
Inventor 张启翔孙向丽潘会堂程堂仁孙明
Owner BEIJING FORESTRY UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap