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Method for producing polysilicon

A production method, polysilicon technology, applied in the direction of chemical instruments and methods, silicon, silicon compounds, etc., can solve the problems of high equipment and operation requirements, achieve the effect of reducing unit production cost, high polysilicon deposition rate, and promoting mass transfer

Inactive Publication Date: 2010-06-02
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the EFG (Edge Defined FilmFeed) method must be used to prepare such hollow silicon tubes. Compared with conventional polysilicon manufacturers using silicon mandrel furnaces to prepare heating elements, additional equipment and devices are required, and the outer diameter is so large The preparation of hollow silicon tubes has high requirements for equipment and operation

Method used

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  • Method for producing polysilicon
  • Method for producing polysilicon
  • Method for producing polysilicon

Examples

Experimental program
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Effect test

Embodiment 1

[0102] In this example, the reaction pressure in the reduction furnace was controlled at 0.3 MPa, and the reaction temperature was controlled at 1100°C.

[0103] At the beginning (0 moment) of the manufacturing method, hydrogen and trichlorosilane are respectively charged at 35.8Nm 3 / h and 5.5Nm 3 The intake air of / h is continuously fed into the reduction furnace. At this time, the molar ratio Q value was 6.5.

[0104] First, use the time of 45 hours to make the molar ratio Q with the above expression of the aforementioned first-order piecewise function (wherein the a value, b value, c value and d value of the first-order piecewise function expression are passed according to the aforementioned in the specification sheet) Calculation method to determine, omitted here, hereinafter the same) continuously decreased to 2.5, at the same time, within the aforementioned range, the intake flow rate of hydrogen and trichlorosilane increased linearly and continuously to 96.8Nm respec...

Embodiment 2

[0120] In this embodiment, the reaction pressure in the reduction furnace is controlled at 0.3 MPa, and the reaction temperature is controlled at 1080°C.

[0121] At the beginning (0 moment) of the manufacturing method, hydrogen and trichlorosilane are respectively charged at 42.7Nm 3 / h and 6.1Nm 3 The intake air of / h is continuously fed into the reduction furnace. At this time, the molar ratio Q is 7.

[0122] First, use the time of 45 hours to make the molar ratio Q with the above expression of the aforementioned first-order piecewise function (wherein the a value, b value, c value and d value of the first-order piecewise function expression are passed according to the aforementioned in the specification sheet) It is determined by calculation method, omitted here, the same below) continuously decreases to 3.0, at the same time, within the aforementioned range, the intake flow rate of hydrogen and trichlorosilane increases linearly and continuously to 118.5Nm with the inc...

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Abstract

The invention relates to a method for producing polysilicon, which produces the polysilicon by continuously introducing a mixed gas which consists of hydrogen and a silicon containing gas and serves as a raw material gas to a reactor, and reacting the raw material gas in the reactor. The method for producing the polysilicon rod comprises the following steps: enabling the molar ratio Q of the hydrogen to the silicon containing gas to satisfy a specific relational expression by regulating the gas input M of the hydrogen serving as the raw material gas, and / or regulating the gas input N of the silicon containing gas serving as the raw material gas; and when the diameter of the polysilicon rod grows to 85 to 100 mm, maintaining the Q value constantly until finishing the reaction. The method for producing the polysilicon rod of the invention can improve the conversion per pass of trichlorosilane in a reduction process and the growing speed of the polysilicon.

Description

technical field [0001] The invention relates to solar energy and semiconductor industries, in particular to a polysilicon production method. Background technique [0002] Polycrystalline silicon is the main raw material for manufacturing semiconductor devices and solar cells, and can also be used to prepare monocrystalline silicon. Its deep-processed products are widely used in the semiconductor industry as the basis of artificial intelligence, automatic control, information processing, photoelectric conversion and other devices. Material. At the same time, due to the energy crisis and the call for a low-carbon economy, the world is actively developing and utilizing renewable energy. Solar energy has attracted the most attention among renewable energy sources due to its cleanness, safety, and abundant resources. One way to harness solar energy is by converting it into electricity through the photovoltaic effect. Silicon solar cells are the most commonly employed devices b...

Claims

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Application Information

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IPC IPC(8): C01B33/021C01B33/03
Inventor 陈其国钟真武崔树玉蒋文武
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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