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Method and device for rapidly drying cleaned silicon wafers

A rapid drying and silicon wafer cleaning technology, which is applied in the direction of drying solid materials, drying solid materials without heating, drying, etc., can solve problems such as uneven surface concentration, uneven distribution of surface tension, and uneven atomization. Achieve the effect of shortening the time, improving the utilization rate and reducing the cleaning time

Active Publication Date: 2013-07-31
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, due to the uneven atomization of IPA, the concentration of vapor mist condenses on the surface of the pure water surface is uneven, so that the distribution of surface tension is also uneven. Leaves particles on the wafer surface after drying

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  • Method and device for rapidly drying cleaned silicon wafers
  • Method and device for rapidly drying cleaned silicon wafers
  • Method and device for rapidly drying cleaned silicon wafers

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Experimental program
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Embodiment

[0026] Take a total of 12 silicon wafers polished under the same process conditions, divide them into four groups (three pieces in each group), and set four different drying conditions after cleaning, respectively:

[0027] The first group: using the device and method of this patent, the last step of hot nitrogen drying time is 4 minutes;

[0028] The second group: using the device and method of this patent, the drying time of the last step of hot nitrogen is 8 minutes;

[0029] The third group: the traditional drying method (that is, the IPA is atomized and directly enters the drying tank), and the last step of drying with hot nitrogen is 4 minutes.

[0030] The fourth group: adopt the traditional drying method (that is, the IPA is atomized and directly enters the drying tank), and the last step of drying with hot nitrogen is 8 minutes.

[0031]In the above four groups of IPA drying processes, the IPA atomization method is high-pressure nitrogen atomization method, and the t...

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Abstract

The invention provides a method and a device for rapidly drying cleaned silicon wafers. The method comprises the following steps: putting the silicon wafers into a drying tank; supplying isopropanol to an atomizing chamber so as to atomize the isopropanol into isopropanol steam mist; and allowing the isopropanol steam mist to enter the drying tank through a condensing chamber and a heating chamber. IPA steam mist is quenched through the condensing chamber to remove droplets with large particle size and impurity particles in the IPA steam mist, and the IPA is suddenly heated through a heating temperature control chamber to further increase the proportion of gasified IPA in the IPA steam mist, so that the IPA steam mist is enabled to uniformly condense on the surface of pure water. The invention has the advantages of shortening the time of drying subsequent hot nitrogen because of the effective removal of large-particle droplets in IPA droplets, reducing the time to clean the silicon wafers overall and improving the utilization rate of cleaners.

Description

technical field [0001] The invention relates to an optimization of an isopropanol (IPA) drying process after cleaning a silicon chip, and is especially suitable for drying after cleaning a large-diameter silicon chip. Its characteristics are: after the general IPA atomization process, two devices, the temperature-controlled condensation chamber and the temperature-controlled heating chamber, are introduced to eliminate the large-sized IPA droplets after atomization, so that the drying process of the entire silicon wafer is more efficient. ,thorough. Background technique [0002] Polished silicon wafers are the most widely used substrate material in integrated circuits. With the development of integrated circuit technology to higher integration, the requirements for the quality of silicon wafers are also more stringent. Silicon wafer cleaning in the present invention refers to the last important process in the silicon polishing wafer manufacturing process, and its purpose is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): F26B5/16H01L21/00
Inventor 盛方毓冯泉林闫志瑞葛钟陈海滨库黎明索思卓
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD