Method for removing gummy residuals positioned on front surface of wafer

Abstract

The invention provides a method for removing gummy residuals positioned on the front surface of a wafer, comprising the following steps of: delivering the wafer to a first chamber for cleaning with an ACT940 solution at the first setting time; delivering the wafer to a second chamber for cleaning with a nitrogen methyl pyrrolidone solution at the second setting time so as to clean the ACT940 solution on the wafer; delivering the wafer to a third chamber for quick dump rinse so as to clean the nitrogen methyl pyrrolidone solution on the wafer; and delivering the wafer to a fourth chamber for drying processing at the third setting time. The method can effectively remove the gummy residuals remained on a protective film adhered on the front surface of the wafer when the back surface of the wafer is ground and prevent the wafer from scraping without influencing an aluminum connection area and a planarization area.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and in particular to a method for cleaning wafers. Background technique [0002] In integrated circuit process technology, the most frequent process step is the wafer cleaning step, accounting for about 30% of all process steps, so its importance is naturally quite high. The main purpose of wafer cleaning is to remove impurity particles and pollutants such as organic compounds and metal impurities on the wafer surface, and to reduce particle adhesion. Since the contamination of conductive impurity particles may cause the leakage of the p-n junction of the semiconductor element, shorten the lifetime of the minority carriers and reduce the breakdown voltage of the gate oxide layer of the element, the adhesion of the particles will affect the authenticity of the pattern transfer of the lithography process , and even lead to a short circuit in the circuit structure and so on. Therefore, i...

AI Technical Summary

Problems solved by technology

[0004] When the wafer is back-ground, a protective film is usually pasted on the front of the wafer to protect the front of the wafer. When the protective film needs to be removed after grinding, part of the protective film will stick to the wafer, especially the contact of the wafer. Residues are likely to be generated at the edge of the pad or at the scrubber line. If these residues are not removed in time and effectively, the wafer will be scrapped. However, the refresh process of the prior art is difficult to be deionized due to the protective film. The water washes away so it is difficult to remove these residues in a timely and effective manner

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